CM600HA-24A Datasheet CM600HA-24A | P1-P3

Publication Date : April 2016

1

CMH-10950-*

Ver.2.0

CM600HA-24A

HIGH POWER SWITCHING USE

INSULATED TYPE

Collector current I

C

.............…..................…

6

0

A

Collector-emitter voltage V

CES

..................

1

2

0

V

Maximum junction temperature T

j max

.........

1

5

0

°C

●Flatbase type

●Copper base plate (non-plating)

●Main terminal screws are not attached.

●RoHS Directive compliant

single switch

●Recognized under UL1557, File E323585

APPLICATION

AC Motor Control, Motion/Servo Control, Power supply, etc.

OUTLINE DRAWING & INTERNAL CONNECTION

Dimension in mm

INTERNAL CONNECTION

E

Di1

C

Tr

1

G

E

(Es)

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2

over 3 to 6 ±0.3

over 6 to 30 ±0.5

over 30 to 120 ±0.8

over 120 to 400 ±1.2

CM600HA-24A

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2016

2

CMH-10950-*

Ver.2.0

MAXIMUM RATINGS (T

j

=25 °C, unless otherwise specified)

Symbol Item Conditions Rating Unit

V

CES

Collector-emitter voltage

G-E short-circuited

1200

V

GES

Gate-emitter voltage

C-E short-circuited

± 20

V

I

C

Collector current

DC, T

C

=80 °C

(Note2, 4)

600

A

I

CRM

Pulse, Repetitive

(Note3)

1200

P

tot

Total power dissipation

T

C

=25 °C

(Note2, 4)

3670

W

I

E

(Note1)

Emitter current

DC

(Note2)

600

A

I

ERM

(Note1)

Pulse, Repetitive

(Note3)

1200

V

isol

Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V

T

j

Operating junction temperature

-

-40 ~ +150

°C

T

stg

Storage temperature

-

-40 ~ +125

ELECTRICAL CHARACTERISTICS (T

j

=25 °C, unless otherwise specified)

Symbol Item Conditions

Limits

Unit

Min. Typ. Max.

I

CES

Collector-emitter cut-off current

V

CE

=V

CES

, G-E short-circuited

-

1.0

mA

I

GES

Gate-emitter leakage current

V

GE

=V

GES

, C-E short-circuited

-

1.0

μA

V

GE(th)

Gate-emitter threshold voltage

I

C

=60 mA, V

CE

=10 V

6

7

8

V

CEsat

Collector-emitter saturation voltage

I

C

=600 A, V

GE

=15 V

(Note5)

T

j

=25 °C - 2.1 3.0

V

Refer to the figure of test circuit

T

j

=125 °C

-

2.4

-

C

ies

Input capacitance

-

105

C

oes

Output capacitance

V

CE

=10 V, G-E short-circuited

-

9.0

nF

C

res

Reverse transfer capacitance - - 2.0

Q

G

Gate charge

V

CC

=600 V, I

C

=600 A, V

GE

=15 V

-

3.0

-

μC

t

d(on)

Turn-on delay time

V

CC

=600 V, I

C

=600 A, V

GE

=±15 V,

-

660

t

r

Rise time

-

190

ns

t

d(off)

Turn-off delay time

R

G

=0.52 Ω, Inductive load

- - 700

t

f

Fall time

-

350

V

EC

(Note.1)

Emitter-collector voltage

I

E

=600 A, G-E short-circuited

(Note5)

3.0 3.8 V

Refer to the figure of test circuit

t

rr

(Note1)

Reverse recovery time

V

CC

=600 V, I

E

=600 A, V

GE

=±15 V,

-

250

ns

Q

rr

(Note1)

Reverse recovery charge R

G

=0.52 Ω, Inductive load - 19 - μC

E

on

Turn-on switching energy per pulse

V

CC

=600 V, I

C

=I

E

=600 A,

-

100

-

mJ

E

off

Turn-off switching energy per pulse

V

GE

=±15 V, R

G

=0.52 Ω, T

j

=125 °C,

-

66

-

E

rr

(Note1)

Reverse recovery energy per pulse

Inductive load

-

29.5

-

mJ

r

g

Internal gate resistance T

c

=25 °C

(Note4)

- 1.0 - Ω

THERMAL RESISTANCE CHARACTERISTICS

Symbol Item Conditions

Limits

Unit

Min. Typ. Max.

R

th(j- c)Q

Thermal resistance

Junction to case, per IGBT

(Note4)

-

34

K/kW

R

th(j- c)D

Junction to case, per FWD

(Note4)

- - 53

R

th(c- s )

Contact thermal resistance

Case to heat sink, Thermal grease applied

(Note4, 6)

-

20

-

K/kW

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

Limits

Unit

Min.

Typ.

Max.

M

t

Mounting torque

Main terminals M 6 screw 1.96 2.45 2.94

N·m

G/E auxiliary terminals

M 4 screw

0.98

1.18

1.47

M

s

Mounting torque

Mounting to heat sink

M 6 screw

1.96

2.45

2.94

N·m

m

mass

-

480

-

g

e

c

Flatness of base plate On the centerline X, Y

(Note7)

±0 - +100 μm

CM600HA-24A

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2016

3

CMH-10950-*

Ver.2.0

*:

This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.

Note1.

Represent ratings and characteristics of the anti-parallel, emitter-collector free-wheeling diode (FWD).

2.

Junction temperature (T

vj

) should not increase beyond T

vjmax

rating.

3.

Pulse width and repetition rate should be such that the device junction temperature (T

vj

) dose not exceed T

vjmax

rating.

4.

Case temperature (T

C

) and heat sink temperature (T

S

) are defined on the each surface (mounting side) of base plate and heat sink just under the chips.

Refer to the figure of chip location.

5.

Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.

6.

Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K)

7.

The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

Y

X

+: Convex

-: Concave

+: Convex

Mounting

side

Mounting

side

Mounting

side

-: Concave

RECOMMENDED OPERATING CONDITIONS

Symbol Item Conditions

Limits

Unit

Min. Typ. Max.

V

CC

(DC) Supply voltage

Applied across C-E terminals

-

600

800

V

GEon

Gate (-emitter drive) voltage Applied across G-Es terminals 13.5 15.0 16.5 V

R

G

External gate resistance

Per switch

0.52

-

7.8

Ω

CHIP LOCATION (Top view)

Dimension in mm, tolerance: ±1 mm

Tr1/Tr2: IGBT, Di1/Di2: FWD

CM600HA-24A

CM600HA-24A

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