NUP2125WTT1G

© Semiconductor Components Industries, LLC, 2015
September, 2016 − Rev. 1
1 Publication Order Number:
NUP2125/D
NUP2125, SZNUP2125
Dual Line CAN
Bus Protector
The SZ/NUP2125 has been designed to protect the CAN transceiver
from ESD and other harmful transient voltage events. This device
provides bidirectional protection for each data line with a single
compact SC−70 (SOT−323) package, giving the system designer a low
cost option for improving system reliability and meeting stringent
EMI requirements.
Features
200 W Peak Power Dissipation per Line (8 x 20 msec Waveform)
Diode Capacitance Matching
Low Reverse Leakage Current (< 100 nA)
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)
ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A
(1 x 50 ms)
ISO 7637−3, Repetitive Electrical Fast Transient (EFT)
EMI Surge Pulses, 50 A (5 x 50 ns)
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
Applications
Automotive Networks
CAN / CAN−FD
Low and High−Speed CAN
Fault Tolerant CAN
www.onsemi.com
PIN 1
PIN 3
PIN 2
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
CAN
Transceiver
CAN_H
CAN_L
NUP2125
CAN Bus
MARKING
DIAGRAM
SC−70
CASE 419
STYLE 4
(Note: Microdot may be in either location)
25MG
G
25 = Specific Device Code
M = Date Code
G = Pb−Free Package
1
NUP2125, SZNUP2125
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C, unless otherwise specified)
Symbol
Rating Value Unit
PPK
Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1)
200 W
T
J
Operating Junction Temperature Range −55 to 150 °C
T
J
Storage Temperature Range −55 to 150 °C
T
L
Lead Solder Temperature (10 s) 260 °C
ESD Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ISO 10605 150 pF / 2 kW Contact
ISO 10605 330 pF / 2 kW Contact
8.0
1.6
30
30
30
30
kV
kV
kV
kV
kV
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C, unless otherwise specified)
Symbol
Parameter Test Conditions Min Typ Max Unit
V
RWM
Reverse Working Voltage (Note 2) 24 V
V
BR
Breakdown Voltage I
T
= 1 mA (Note 3) 26.2 28.5 32 V
I
R
Reverse Leakage Current V
RWM
= 24 V 15 100 nA
V
C
Clamping Voltage
I
PP
= 1 A (8/20 ms Waveform)
(Note 4)
33.4 36.6 V
V
C
Clamping Voltage
I
PP
= 3 A (8/20 ms Waveform)
(Note 4)
44 50 V
I
PP
Maximum Peak Pulse Current
8/20 ms Waveform (Note 4)
3.0 A
C
J
Capacitance V
R
= 0 V, f = 1 MHz (Line to GND) 10 pF
DC
Diode Capacitance Matching V
R
= 0 V, 5 MHz (Note 5) 0.26 2 %
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Pulse waveform per Figure 1.
5. DC is the percentage difference between C
J
of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
table.
ORDERING INFORMATION
Device Package Shipping
NUP2125WTT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
SZNUP2125WTT1G*
NUP2125WTT3G
10000 / Tape & Reel
SZNUP2125WTT3G*
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
NUP2125, SZNUP2125
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
Figure 1. Pulse Waveform, 8 × 20 ms
110
90
80
70
60
50
40
30
20
10
0
0 5 15 25
t, TIME (ms)
% OF PEAK PULSE CURRENT
WAVEFORM
PARAMETERS
t
r
= 8 ms
t
d
= 20 ms
t
d
= I
PP
/2
30
Figure 2. Clamping Voltage vs Peak Pulse Current
3.5
2.5
2.0
1.5
1.0
0.5
0.0
40
V
C
, CLAMPING VOLTAGE (V)
I
PP
, PEAK PULSE CURRENT (A)
30 35 45 50
100
10 20
c−t
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
5
05
V
R
, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
10 15 20 25
125°C
4
3
9
2
6
25°C
0
5
10
15
20
25
30
35
40
45
50
20 22 24 26 28 30 32 34
Figure 4. V
BR
versus I
T
Characteristics
T
A
= −55°C
125°C
25°C
65°C
V
BR
, VOLTAGE (V)
I
T
, (mA)
Figure 5. I
R
versus Temperature Characteristics
0
5
10
15
20
25
012345
−55°C
T
A
= +150°C
+25°C
I
L
, LEAKAGE CURRENT (nA)
V
R
, REVERSE BIAS VOLTAGE (V)
0
20
40
60
80
100
120
−60 −30 0 30 60 90 120 150 180
Figure 6. Temperature Power Dissipation Derating
TEMPERATURE (°C)
PERCENT DERATING (%)
3.0
7
8

NUP2125WTT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 26.2VZMIN 2LINE SC70
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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