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IXFK74N50P2

P1-P3P4-P4
© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 500 V
V
GSS
Continuous ± 30 V
V
GSM
Transient ± 40 V
I
D25
T
C
= 25°C 74 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
185 A
I
A
T
C
= 25°C74A
E
AS
T
C
= 25°C3J
P
D
T
C
= 25°C 1400 W
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 30 V/ns
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-264) 1.13/10 Nm/lb.in.
F
C
Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA 3.0 5.0 V
I
GSS
V
GS
= ± 30V, V
DS
= 0V ± 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 10 μA
T
J
= 125°C 1.5 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 77 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK74N50P2
IXFX74N50P2
V
DSS
= 500V
I
D25
= 74A
R
DS(on)
≤≤
≤≤
≤
77m
ΩΩ
ΩΩ
Ω
DS100252A(9/11)
Polar2
TM
HiPerFET
TM
Power MOSFET
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
G
D
S
TO-264 (IXFK)
S
G
D
Tab
Features
z
Fast Intrinsic Diode
z
Dynamic dv/dt Rating
z
Avalanche Rated
z
Low R
DS(ON)
and Q
G
z
Low Package Inductance
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Battery Chargers
z
Uninterrupted Power Supplies
z
AC and DC Motor Drives
z
High Speed Power Switching
Application
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK74N50P2
IXFX74N50P2
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 74 A
I
SM
Repetitive, Pulse Width Limited by T
JM
296 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
250 ns
Q
RM
1.3 μC
I
RM
13.0 A
I
F
= 37A, -di/dt = 100A/μs
V
R
= 80V, V
GS
= 0V
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 40 65 S
C
iss
9900 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 1015 pF
C
rss
70 pF
R
Gi
Gate Input Resistance 1.9 Ω
t
d(on)
25 ns
t
r
11 ns
t
d(off)
60 ns
t
f
11 ns
Q
g(on)
165 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
44 nC
Q
gd
67 nC
R
thJC
0.089 °C/W
R
thCS
0.15 °C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
TO-264 Outline
PLUS247
TM
Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK74N50P2
IXFX74N50P2
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6
V
5
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
5
V
6
V
7
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
0246810121416
V
DS
- Volts
I
D
- Amperes
5
V
6V
4V
V
GS
= 10V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 37A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50-250 255075100125150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 74A
I
D
= 37A
Fig. 5. R
DS(on)
Normalized to I
D
= 37A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 20 40 60 80 100 120 140 160
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
10
20
30
40
50
60
70
80
-50-250 255075100125150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P4

IXFK74N50P2

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MOSFET PolarP2 Power MOSFET
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New from this manufacturer.
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