Document #: 001-15577 Rev. *A Page 4 of 9
Absolute Maximum Ratings
Supply Voltage (V
DD
)........................................–0.5 to +7.0V
DC Input Voltage ......................................–0.5V to V
DD
+ 0.5
Storage Temperature (Non-condensing) .... –55°C to +125°C
Junction Temperature................................ –40°C to +125°C
Data Retention at Tj = 125°C ................................> 10 years
Package Power Dissipation......................................350 mW
Static Discharge Voltage.......................................... >
2000V
(per MIL-STD-883, Method 3015) l
Note
1. Guaranteed by characterization, not 100% tested.
Recommended Crystal Specifications
Parameter Description Comments Min Typ. Max Unit
F
NOM
Nominal Crystal Frequency Parallel resonance, fundamental mode,
AT cut
10 – 30 MHz
C
LNOM
Nominal Load Capacitance 6 – 30 pF
R
1
Equivalent Series Resistance (ESR) Fundamental mode – – 25 Ω
DL Crystal Drive Level No external series resistor assumed – 0.5 2 mW
Operating Conditions
Parameter Description Min Typ. Max Unit
V
DD
Supply Voltage 3.13 3.30 3.45 V
T
A
Ambient Commercial Temperature 0 – 70 °C
Ambient Industrial Temperature –40 – 85 °C
C
LOAD
Max. Load Capacitance at pin 5 and pin 6 – – 10 pF
F
XIN
External Reference Crystal 10 – 30 MHz
F
CLKIN
External Reference Clock 10 – 133 MHz
F
CLKOUT
CLKOUT frequency, Commercial Temperature 20 – 200 MHz
CLKOUT frequency, Industrial Temperature 20 – 166 MHz
F
REFOUT
REFOUT frequency 10 – 133 MHz
T
PU
Power up time for all V
DD
s to reach minimum specified voltage (power ramp must
be monotonic)
0.05 – 500 ms
DC Electrical Characteristics
Parameter Description Condition Min Typ Max Unit
I
OH
Output High Current V
OH
= V
DD
– 0.5V, V
DD
= 3.3V (source) 10 12 mA
I
OL
Output Low Current V
OL
= 0.5V, V
DD
= 3.3V (sink) 10 12 mA
V
IH
Input High Voltage CMOS levels, 70% of V
DD
0.7V
DD
–V
DD
+ 0.3 V
V
IL
Input Low Voltage CMOS levels, 30% of V
DD
–0.3 – 0.3V
DD
V
I
IH
Input High Current, PD#/OE V
IN
= V
DD
––10μA
I
IL
Input Low Current, PD#/OE V
IN
= V
SS
, pull up disabled – – 10 μA
V
IN
= V
SS
, pull up enabled – – 55 μA
I
OZ
Output Leakage Current Three-state output, PD#/OE = 0 –10 10 μA
C
XIN
or C
XOUT
[1]
Programmable Capacitance
at pin 1 and pin 8
Capacitance at minimum setting – 12 – pF
Capacitance at maximum setting – 60 – pF
C
IN
[1]
Input Capacitance at PD#/OE – 5 7 pF
I
DD
Supply Current f
IN
= 10 MHz, f
OUT
= 33 MHz, REFOUT off – 11 15 mA
I
DDS
Standby current Device powered down with PD# = 0V (driven
reference pulled down)
–1040μA
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