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CSD10060G

P1-P3P4-P6
1
Subject to change without notice.
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CSD10060–Silicon Carbide Schottky Diode
Zero recovery
®
RectifieR
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonV
F
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
-TypicalPFCP
out
:1000W-2000W
• MotorDrives
-TypicalPower:3HP-5HP 
Package
TO-263-2 TO-220-2
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 600 V
V
RSM
SurgePeakReverseVoltage 600 V
V
DC
DCBlockingVoltage 600 V
I
F(AVG)
AverageForwardCurrent
10
16.5
A
T
C
=150˚C
T
C
=125˚C
I
F(Peak)
PeakForwardCurrent 23 A T
C
=125˚,T
REP
<1mS,Duty=0.5
I
FRM
RepetitivePeakForwardSurgeCurrent
43
29
A
T
C
=25˚C,t
P
=10ms,HalfSineWave
T
C
=125˚C,t
P
=10ms,HalfSineWave
I
FSM
Non-RepetitivePeakForwardSurgeCurrent 77 A T
C
=25˚C,t
P
=1.5ms,HalfSineWave
I
FSM
Non-RepetitivePeakForwardSurgeCurrent 250 A T
C
=25˚C,t
P
=10µs,Pulse
P
tot
PowerDissipation
136.3
45.4
W
T
C
=25˚C
T
C
=125˚C
T
J
,T
stg
OperatingJunctionandStorageTemperature
-55to
+175
˚C
TO-220MountingTorque
1
8.8
Nm
lbf-in
M3Screw
6-32Screw
PIN1
PIN2
CASE
Part Number Package Marking
CSD10060A TO-220-2 CSD10060
CSD10060G TO-263-2 CSD10060
V
RRM
= 600 V
I
F(AVG)
=10A
Q
c
=28nC
2 CSD10060Rev.S
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
ForwardVoltage
1.5
2.0
1.8
2.4
V
I
F
=10AT
J
=25°C
I
F
=10AT
J
=175°C
I
R
ReverseCurrent
50
100
200
1000
μA
V
R
= 600 V T
J
=25°C
V
R
= 600 V T
J
=150°C
Q
C
TotalCapacitiveCharge 28 nC
V
R
=600V,I
F
=10A
di/dt=500A/μs
T
J
=25°C
C TotalCapacitance
550
65
50
pF
V
R
=0V,T
J
=25°C,f=1MHz
V
R
=200V,T
J
=25˚C,f=1MHz
V
R
=400V,T
J
=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
R
θJC
ThermalResistancefromJunctiontoCase 1.1 °C/W
Typical Performance
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
V
R
Reverse Voltage (V
)
I
R
Reverse Current (μA)
200
180
160
140
120
100
80
60
40
20
0
0 100200300400500600700
V
F
Forward Voltage (V
)
I
F
Forward Current (A)
20
18
16
14
12
10
8
6
4
2
0
0 1.02.03.04.0
3 CSD10060Rev.S
Current Derating
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
55.0
60.0
65.0
70.0
75.0
80.0
85.0
90.0
95.0
100.0
25 50 75 100 125 150 175 200
Case Temperature
Peak Forward Current
DC 70% Duty 50% Duty 30% Duty 10% Duty
Figure3.CurrentDerating
Figure4.Capacitancevs.ReverseVoltage
Figure5.TransientThermalImpedance
Typical Performance
100
90
80
70
60
50
40
30
20
10
0
25 5075100125150175200
I
F(PEAK)
Peak Forward Current (A)
10%Duty*
30%Duty*
50%Duty*
70%Duty*
DC
T
C
Case Temperature (
°
C
)
*Frequency>1KHz
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Tim e (s)
Zth (°C/W)
V
R
Reverse Voltage (V
)
C
Capacitance (pF)
400
350
300
250
200
150
100
50
0
1 10 100 1000
P1-P3P4-P6

CSD10060G

Mfr. #:
Buy CSD10060G
Manufacturer:
N/A
Description:
DIODE SCHOTTKY 600V 16.5A TO263
Lifecycle:
New from this manufacturer.
Delivery:
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