IXFH18N90P Datasheet IXFH18N90P, IXFT18N90P, IXFV18N90P | P1-P3

DS100057B(03/11)

V

DSS

= 900V

I

D25

= 18A

R

DS(on)

≤≤

≤ 600m

ΩΩ

Ω

t

rr

≤≤

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 900 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 900 V

V

GSS

Continuous ± 30 V

V

GSM

Transient ± 40 V

I

D25

T

C

= 25°C18A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

36 A

I

A

T

C

= 25°C9A

E

AS

T

C

= 25°C 800 mJ

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

,T

J

≤ 150°C 15 V/ns

P

D

T

C

= 25°C 540 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-247) 1.13/10 Nm/lb.in.

F

C

Mounting Force (PLUS220) 11..65/2.5..14.6 N/lb.

Weight TO-247 6 g

TO-268 4 g

PLUS220 Types 4 g

IXFH18N90P

IXFT18N90P

IXFV18N90P

IXFV18N90PS

Polar

TM

HiPerFET

TM

Power MOSFETs

Features

z

International Standard Packages

z

Avalanche Rated

z

Low Package Inductance

z

Fast Intrinsic Diode

Advantages

z

High Power Density

z

Easy to Mount

z

Space Savings

Applications

z

Switch-Mode and Resonant-Mode

Power Supplies

z

DC-DC Converters

z

Laser Drivers

z

AC and DC Motor Drives

z

Robotics and Servo Controls

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 900 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1mA 3.5 6.5 V

I

GSS

V

GS

= ± 30V, V

DS

= 0V ± 100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 μA

T

J

= 125°C 1.5 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 600 mΩ

G = Gate D = Drain

S = Source Tab = Drain

PLUS220SMD (IXFV_S)

G

S

D (Tab)

PLUS220 (IXFV)

G

D

S

D (Tab)

TO-268 (IXFT)

TO-247 (IXFH)

D (TAB)

G

D

S

G

S

D (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFH18N90P IXFV18N90P

IXFT18N90P IXFV18N90PS

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 6 10 S

R

Gi

Gate Input Resistance 1.2 Ω

C

iss

5230 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 366 pF

C

rss

53 pF

t

d(on)

40 ns

t

r

33 ns

t

d(off)

60 ns

t

f

44 ns

Q

g(on)

97 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

30 nC

Q

gd

40 nC

R

thJC

0.23 °C/W

R

thCS

(TO-247 & PLUS220) 0.25 °C/W

Source-Drain Diode

Characteristic Values

T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 18 A

I

SM

Repetitive, Pulse Width Limited by T

JM

72 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

300 ns

Q

RM

1.0 μC

I

RM

10.8 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 2Ω (External)

I

F

= 9A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= 0V

IXFH18N90P IXFV18N90P

IXFT18N90P IXFV18N90PS

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

2

4

6

8

10

12

14

16

18

012345678910

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6

V

5

V

7V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

4

8

12

16

20

24

28

32

36

40

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

5

V

6

V

7

V

8

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

2

4

6

8

10

12

14

16

18

0 2 4 6 8 10 12 14 16 18 20 22 24

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6

V

5

V

7

V

Fig. 4. R

DS(on)

Normalized to I

D

= 9A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 18A

I

D

= 9A

Fig. 5. R

DS(on)

Normalized to I

D

= 9A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

0 4 8 12162024283236

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10

V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

2

4

6

8

10

12

14

16

18

20

-50-250 255075100125150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFH18N90P

IXFH18N90P

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