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ESH2PB-M3/84A

P1-P3P4-P5
ESH2PB, ESH2PC, ESH2PD
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
1
Document Number: 89016
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount Ultrafast Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high frequency
• Low forward voltage drop, low power losses
• Low thermal resistance
• Meets MSL level 1 per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of AC/DC and DC/DC converters
in high temperature for both consumer and automotive
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
100 V, 150 V, 200 V
t
rr
25 ns
V
F
at I
F
= 2 A 0.75 V
T
J
max. 175 °C
Package DO-220AA (SMP)
Diode variations Single die
DO-220AA (SMP)
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH2PB ESH2PC ESH2PD UNIT
Device marking code P2B P2C P2D
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Maximum average forward rectified current (fig. 1) I
F(AV)
2.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
50 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
ESH2PB, ESH2PC, ESH2PD
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
2
Document Number: 89016
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas. R
JL
is
measured at the terminal of cathode band. R
JC
is measured at the top center of the body
Note
(1)
Automotive grade
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous
forward voltage
I
F
= 2 A
T
J
= 25 °C
V
F
(1)
0.90 0.98
V
T
J
= 125 °C 0.75 0.82
Maximum reverse current at
rated V
R
T
J
= 25 °C
I
R
(2)
0.2 1.0
μA
T
J
= 125 °C 12.6 25
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A t
rr
-25ns
Typical reverse recovery time
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
t
rr
25 -
ns
T
J
= 100 °C 35 -
Typical stored charge
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
Q
rr
10 -
nC
T
J
= 100 °C 15 -
Typical junction capacitance 4.0 V, 1 MHz C
J
25 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH2PB ESH2PC ESH2PD UNIT
Typical thermal resistance
R
JA
(1)
80
°C/W R
JL
(1)
15
R
JC
(1)
22
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ESH2PB-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel
ESH2PB-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel
ESH2PBHM3/84A
(1)
0.024 84A 3000 7" diameter plastic tape and reel
ESH2PBHM3/85A
(1)
0.024 85A 10 000 13" diameter plastic tape and reel
ESH2PB, ESH2PC, ESH2PD
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
3
Document Number: 89016
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
0
2.4
95 105 115 125 135 145 155 165
1.6
2.0
0.4
0.8
1.2
175
T
L
Measured
at the Cathode Band Terminal
Lead Temperature (°C)
Average Forward Rectified Current (A)
1
10
100
10
20
30
0
40
50
Number of Cycles at 50 Hz
Peak Forward Surge Current (A)
0.4 0.6 0.8 1.2 1.4
0.1
10
1
100
0.01
1.00.2 1.6
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
20 40 60 80 100
0.1
1
10
100
10 30 50 70 90
0.01
1000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
0.1 101 100
1
100
10
1000
Reverse Voltage (V)
Junction Capacitance (pF)
P1-P3P4-P5

ESH2PB-M3/84A

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Buy ESH2PB-M3/84A
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 100volts 1.0amp
Lifecycle:
New from this manufacturer.
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