SF802G C0G

SF801G - SF808G
CREAT BY ART
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 300 400 500 600 V
V
RMS
35 70 105 140 210 280 350 480 V
V
DC
50 100 150 200 300 400 500 600 V
I
F(AV)
A
t
rr
ns
C
J
pF
R
θJC
°C/W
T
J
°C
T
STG
°C
Version: H1511
Taiwan Semiconductor
8A, 50V - 600V Glass Passivated Su
p
er Fast Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TO-220AB
SF
802G
SF
803G
SF
804G
MECHANICAL DATA
Case: TO-220AB
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.82 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
SF
805G
SF
806G
SF
808G
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
SF
807G
PARAMETER SYMBOL
SF
801G
μA
Maximum DC blocking voltage
Maximum average forward rectified current 8
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
125
Typical thermal resistance 3
A
Maximum instantaneous forward voltage (Note 1)
@ 4 A
V
F
V
Maximum reverse current @ rated V
R
T
J
=25°C
I
R
10
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
0.975 1.3 1.7
Maximum reverse recovery time (Note 2) 35
70 50
T
J
=100°C
400
Typical junction capacitance (Note 3)
PART NO.
Note 1: "x" defines voltage from 50V (SF801G) to 600V (SF808G)
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Version: H1511
SF801G - SF808G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX
PACKING
CODE
PACKING CODE
SUFFIX
(*)
PACKAGE PACKING
SF80xG
(Note 1)
H C0 G TO-220AB 50 / Tube
EXAMPLE
EXAMPLE
PART NO.
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
SF808GHC0G SF808G H C0 G
AEC-Q101 qualified
Green compound
0
2
4
6
8
10
050100150
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (
°
C)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
Resistive or
inductive load
with heatsink
0
30
60
90
120
150
1 10 100
PEAK FORWARD SURGE CURRENT(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms single half sine wave
0.1
1
10
100
1000
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
T
J
=100°C
T
J
=25°C
0.1
1
10
100
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE. (V)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
Pulse width=300μs
1% duty cycle
SF801G~SF804G
SF805G~SF806G
SF807G~SF808G
Min Max Min Max
A - 10.50 - 0.413
B 2.62 3.44 0.103 0.135
C 2.80 4.20 0.110 0.165
D 0.68 0.94 0.027 0.037
E 3.54 4.00 0.139 0.157
F 14.60 16.00 0.575 0.630
G 13.19 14.79 0.519 0.582
H 2.41 2.67 0.095 0.105
I 4.42 4.76 0.174 0.187
J 1.14 1.40 0.045 0.055
K 5.84 6.86 0.230 0.270
L 2.20 2.80 0.087 0.110
M 0.35 0.64 0.014 0.025
N 1.14 1.77 0.045 0.070
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Version: H1511
MARKING DIAGRAM
SF801G - SF808G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
TO-220AB
DIM.
Unit (mm) Unit (inch)
40
50
60
70
80
90
100
1 10 100 1000
CAPACITANCE (pF)
REVERSE VOLTAGE. (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
SF801G~SF804
SF805G~SF808G
f=1.0MHz
Vslg=50mVp-p

SF802G C0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
DIODE GEN PURP 100V 8A TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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