MMBD1701/A / 1703/A / 1704/A / 1705/A
MMBD1700 series, Rev. B1
Small Signal Diodes
MMBD1701/A / 1703/A / 1704/A / 1705/A
MARKING
MMBD1701 85 MMBD1701A 85A
MMBD1703 87 MMBD1703A 87A
MMBD1704 88 MMBD1704A 88A
MMBD1705 89 MMBD1705A 89A
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation 350 mW
R
θ
JA
Thermal Resistance, Junction to Ambient 357
°
C/W
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage 30 V
I
F(AV)
Average Rectified Forward Current 50 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
250
mA
T
stg
Storage Temperature Range -55 to +150
°
C
T
J
Operating Junction Temperature 150
°
C
1
2
3
85
3
1
2
SOT-23
Connection Diagrams
1701
1703
1704 1705
11
3
21
2
2
3
3
3
1
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R
= 5.0
µ
A
30
V
V
F
Forward Voltage
I
F
= 10
µ
A
I
F
= 100
µ
A
I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 20 mA
I
F
= 50 mA
420
520
640
760
810
0.89
500
610
740
880
950
1.1
mV
mV
mV
mV
mV
V
I
R
Reverse Current
V
R
= 20 V 50
nA
C
T
Total Capacitance
V
R
= 0, f = 1.0 MHz
1.0 pF
t
rr
Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
Ω
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
Ω
0.7
1.0
ns
ns
2NC
