IXFK72N20 Datasheet IXFK72N20, IXFK80N20 | P1-P3

1 - 4

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 200 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MW 200 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C 72N20 72 A

80N20 80 A

I

DM

T

C

= 25°C, 72N20 288 A

pulse width limited by T

JM

80N20 320 A

I

AR

T

C

= 25°C74A

E

AR

T

C

= 25°C45mJ

dv/dt I

S

£ I

DM

, di/dt £ 100 A/ms, V

DD

£ V

DSS

, 5 V/ns

T

J

£ 150°C, R

G

= 2 W

P

D

T

C

= 25°C 360 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.063 in) from case for 10 s 300 - °C

M

d

Mounting torque 0.9/6 Nm/lb.in.

Weight 10 g

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

Features

• International standard packages

• Molding epoxies meet UL 94 V-0

flammability classification

• Low R

DS (on)

HDMOS

TM

process

• Unclamped Inductive Switching (UIS)

rated

• Fast intrinsic rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

Advantages

• Easy to mount

• Space savings

• High power density

V

DSS

I

D25

R

DS(on)

IXFK72N20 200 V 72 A 35 mW

IXFK80N20 200 V 80 A 30 mW

t

rr

£ 200 ns

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 1 mA 200 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 2 4 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

J

= 25°C 200 mA

V

GS

= 0 V T

J

= 125°C1mA

R

DS(on)

V

GS

= 10 V,I

D

= 0.5 • I

D25

72N20 35 mW

80N20 30 mW

Pulse test, t £ 300 ms, duty cycle d £ 2 %

97523C (07/00)

G = Gate D = Drain

S = Source TAB = Drain

S

G

D

TO-264 AA

(TAB)

HiPerFET

TM

Power MOSFETs

Preliminary data

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

V

DS

= 10 V; I

D

= 0.5 • I

D25

, pulse test 35 42 S

C

iss

5900 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 1140 pF

C

rss

480 pF

t

d(on)

40 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

55 ns

t

d(off)

R

G

= (External), 120 ns

t

f

26 ns

Q

g(on)

280 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

39 nC

Q

gd

120 nC

R

thJC

0.35 K/W

R

thCK

0.15 K/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V 72N20 72 A

80N20 80 A

I

SM

Repetitive; pulse width limited by T

JM

72N20 288 A

80N20 320 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

200 ns

Q

RM

I

F

= I

S

, -di/dt = 100 A/ms, V

R

= 100 V 1.2 mC

I

RM

10 A

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TO-264 AA Outline

IXFK72N20 IXFK80N20

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 4

T

C

- Degrees C

-50 -25 0 25 50 75 100 125 150

I

D

- Amperes

0

20

40

60

80

100

V

GS

- Volts

246810

I

D

- Amperes

0

40

80

120

160

T

J

- Degrees C

25 50 75 100 125 150

R

DS(ON)

- Normalized

0.8

1.2

1.6

2.0

2.4

I

D

= 40A

V

DS

- Volts

0 4 8 12 16 20

I

D

- Amperes

0

40

80

120

160

200

V

DS

- Volts

0 4 8 12 16 20

I

D

- Amperes

0

40

80

120

160

200

5V

T

J

= 125

O

C

V

GS

= 10V

T

J

= 25

O

C

T

J

= 125

o

C

6V

5V

6V

IXFK72N20

IXFK80N20

V

GS

= 10V

9V

8V

I

D

= 80A

T

J

= 25

o

C

I

D

- Amperes

0 50 100 150 200 250

R

DS(ON)

- Normalized

0.8

1.2

1.6

2.0

2.4

2.8

3.2

T

j

= 125

0

C

T

j

=25

0

C

V

GS

= 10V

7V

V

GS

= 10V

9V

8V

IXFK72N20 IXFK80N20

Figure 2. Output Characteristics at 125

O

CFigure 1. Output Characteristics at 25

O

C

Figure 3. R

DS(on)

normalized to 0.5 I

D25

value Figure 4. R

DS(on)

normalized to 0.5 I

D25

value

Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves

IXFK72N20

IXFK72N20

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