DDC144NS-7

DDC144NS
DUAL NPN PRE-BIASED TRANSISTOR
General Descriptions
DDC144NS features discrete dual NPN transistors that
can support continuous maximum current up to 100 mA.
It is suited for applications where the load needs to be
turned on and off using circuits like micro-controllers,
comparators, etc., particularly at a point of load. The
component devices can be used as a part of a circuit or
as a stand alone discrete device.
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. "Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Figure 2
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.0065 grams (approximate)
Fig. 1: SOT-363
Fig. 2: Schematic and Pin Configuration
Maximum Ratings, Total Device @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
P
d
200 mW
Thermal Resistance, Junction to Ambient Air (Note 3)
R
θ
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Collector Current
I
C
(max)
100 mA
Maximum Ratings:
Sub-Component Device - Pre-Biased NPN Transistor @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage
V
cc
50 V
Input Voltage
V
in
-10 to +40 V
Output Current Io 100 mA
Electrical Characteristics:
Pre-Biased NPN Transistor @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
V
I(off)
0.5 1.1
V
V
cc
= 5V, I
O
= 100uA
Input Voltage
V
I(on)
1.5 3 V
V
O
= 0.3V, I
O
= 2mA
Output Voltage
V
O(on)
0.1 0.3 V
I
O
/I
I
= 10mA/0.5mA
Input Current
I
I
0.18 mA
V
I
= 5V
Output Current
I
O(off)
0.5 uA
V
cc
= 50V, V
I
= 0V
DC Current Gain
G
I
100
V
O
= 5V, I
O
= 5mA
Input Resistor (R1) Tolerance
Δ R1
-30
+30 %
Resistance Ratio Tolerance R2/R1 -20
+20 %
Gain-Bandwidth Product
f
T
250
MHz
V
CE
= 10V, I
E
= 5mA, f = 100 MHz
Notes: 1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or go to Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf
DS30747 Rev. 6 - 2
1 of 4
www.diodes.com
DDC144NS
© Diodes Incorporated
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Typical Characteristics of NPN Transistor @ T
A
= 25°C unless otherwise specified
-50
050100
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 3 Derating Curve
A
°
150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
0
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
V , COLLECTOR EMITTER VOLTAGE (V)
Fig. 4 Typical V vs. I
CE
CE C
0.2
0.4 0.6
0.8
1
1.2
1.4 1.6
1.8 2
0
50
100
150
250
300
400
350
450
0.1
1
100
1,000
h , DC CURRENT GAIN
FE
I COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain
C
10
200
V = 5V
CE
T = 125
A
ο
C
T = 150
A
ο
C
T = 85
A
ο
C
T = 25
A
ο
C
T = -55
A
ο
C
0
50
100
150
200
250
300
350
400
450
0.1
1,000
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 6 Typical DC Current Gain
C
10
1
100
0.01
1
10
100
0.1
1100
1,000
V,
C
O
LLE
C
T
O
R
V
O
L
T
A
G
E(V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 7 Typical V vs. I
C
CE(SAT) C
10
0.1
I/I=10
cb
T = 150C
A
ο
0.01
0.1
1
10
100
0.1 1 10
100 1,000
I , COLLECTOR CURRENT (mA)
Fig. 8 Typical V vs. I
C
CE(SAT) C
V,
C
O
LLE
C
T
O
R
V
O
L
T
A
G
E (V)
CE(SAT)
DS30747 Rev. 6 - 2
2 of 4
www.diodes.com
DDC144NS
© Diodes Incorporated
DS30747 Rev. 6 - 2
3 of 4
www.diodes.com
DDC144NS
© Diodes Incorporated
0
2.5
7.5
5
15
20
2
5
12.5
17.5
22.5
10
0.1
110
100
V , IN
P
U
T
V
O
L
T
A
G
E (V)
I(ON)
I , OUTPUT CURRENT (mA)
Fig. 9 Typical Input Voltage vs. Output Current
C
V = 0.3V
CE
T = -55°C
A
T = 150°C
A
T = 125°C
A
T = 25°C
A
T = 85°C
A
0
1.5
4.5
3
9
12
15
7.5
10.5
13.5
6
0.1
1
10 100
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 10 Typical V vs. I
C
BE(ON) C
V = 5V
CE
T = -55°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0
6
3
9
30
12
15
18
21
24
27
0.1
1
10
100
V , BASE-EMI
T
T
E
R
SATURATION VOLTAGE (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 11 Typical V vs. I
C
BE(SAT) C
0
6
3
9
30
12
15
18
21
24
27
0.1 1
10
100
V , BASE-EMI
T
T
E
R
SATURATION VOLTAGE (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 12 Typical V vs. I
C
BE(SAT) C
I/I = 20
cb
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
Ordering Information (Note 4)
Device Packaging Shipping
DDC144NS-7 SOT-363 3000/Tape & Reel
Notes: 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
S20
YM
S20 = Product Type Marking Code,
YM = Date Code Marking
Y = Year, e.g., T = 2006
M = Month, e.g., 9 = September
Fig. 13
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

DDC144NS-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased 200mW R1=R2=47K
Lifecycle:
New from this manufacturer.
Delivery:
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