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MJ15024G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 12
1 Publication Order Number:
MJ15022/D
MJ15022 (NPN),
MJ15024 (NPN)
Silicon Power Transistors
The MJ15022 and MJ15024 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area
• High DC Current Gain
• These Devices are Pb−Free and are RoHS Compliant*
• Complementary to MJ15023 (PNP), MJ15025 (PNP)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJ15022
MJ15024
V
CEO
200
250
Vdc
Collector−Base Voltage
MJ15022
MJ15024
V
CBO
350
400
Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector−Emitter Voltage V
CEX
400 Vdc
Collector Current − Continuous I
C
16 Adc
Collector Current − Peak (Note 1) I
CM
30 Adc
Base Current − Continuous I
B
5 Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
250
1.43
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +200
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.70
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
16 AMPERES
SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
MJ15022G TO−204
(Pb−Free)
100 Units / Tray
MJ1502xG
AYWW
MEX
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MJ1502x = Device Code
x = 2 or 4
G=Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
MJ15024G TO−204
(Pb−Free)
100 Units / Tray
1
2
3
1
BASE
2
EMITTER
CASE
3
SCHEMATIC
MJ15022 (NPN), MJ15024 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 100 mAdc, I
B
= 0) MJ15022
MJ15024
V
CEO(sus)
200
250
−
−
−
Collector Cutoff Current
(V
CE
= 200 Vdc, V
BE(off)
= 1.5 Vdc) MJ15022
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc) MJ15024
I
CEX
−
−
250
250
mAdc
Collector Cutoff Current
(V
CE
= 150 Vdc, I
B
= 0) MJ15022
(V
CE
= 200 vdc, I
B
= 0) MJ15024
I
CEO
−
−
500
500
mAdc
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
B
= 0)
I
EBO
− 500
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 0.5 s (non−repetitive))
(V
CE
= 80 Vdc, t = 0.5 s (non−repetitive))
I
S/b
5
2
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 4 Vdc)
(I
C
= 16 Adc, V
CE
= 4 Vdc)
h
FE
15
5
60
−
−
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
−
−
1.4
4.0
Vdc
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 4 Vdc)
V
BE(on)
− 2.2 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− 500 pF
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
100
Figure 1. Active−Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.5 10 1 k
20
T
C
= 25°C
50 250
0.1
I
C
, COLLECTOR CURRENT (AMPS)
0.2
1.0
5.0
50
500100
10
20
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN
LIMITED
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
J(pk)
= 200_C; T
C
is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.
MJ15022 (NPN), MJ15024 (NPN)
http://onsemi.com
3
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
f
T
, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 2. Capacitances
Figure 3. Current−Gain — Bandwidth Product
Figure 4. DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS)
0.1 0.3 0.5
9
5
V
CE
= 4 V
8
2
1.0 5.0
0
1
3
4
7
6
1.8
0.03
I
B
, BASE CURRENT (AMPS)
1.0 305.02.00.5
1.0
0.6
0.2
2.0 10
0
1.4
100.20.1
8 A
I
C
= 4 A
4000
0.3
V
R
, REVERSE VOLTAGE (VOLTS)
50
C, CAPACITANCE (pF)
T
J
= 25°C
10010
500
100
40
1000
3003010.5
Figure 5. “On” Voltage
5.0
1.8
0.15
I
C
, COLLECTOR CURRENT (AMPS)
10
V, VOLTAGE (VOLTS)
T
J
= 25°C
205.0
1.0
0.8
0.2
0
1.4
2.01.0
V
CE(sat)
@ I
C
/I
B
= 10
0.5
V
BE(on)
@ V
CE
= 4 V
Figure 6. Collector Saturation Region
I
C
, COLLECTOR CURRENT (AMPS)
200
h
FE
, DC CURRENT GAIN
100
1.0
5.0
10
20
50
C
ob
T
J
= 25°C
T
J
= 100°C
T
J
= 25°C
V
CE
= 10 V
f
Tes t
= 1 MHz
100°C
25°C
T
J
= 25°C
16 A
3000
0.2 10 205.02.01.00.5
C
ib
100°C
TYPICAL CHARACTERISTICS
P1-P3P4-P4

MJ15024G

Mfr. #:
Buy MJ15024G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 16A 250V 250W NPN
Lifecycle:
New from this manufacturer.
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