SAM G53G / SAM G53N [SUMMARY DATASHEET]
Atmel-11240ES-ATARM-SAM-G53G-SAM-G53N-Summary Datasheet_27-Jul-15
2
Features
Core
̶ ARM Cortex-M4 up to 48 MHz
̶ Memory Protection Unit (MPU)
̶ DSP Instructions
̶ Floating Point Unit (FPU)
̶ Thumb
®
-2 instruction set
Memories
̶ 512 Kbytes embedded Flash
̶ 96 Kbytes embedded SRAM
System
̶ Embedded voltage regulator for single-supply operation
̶ Power-on reset (POR) and Watchdog for safe operation
̶ Quartz or ceramic resonator oscillators: 3 to 20 MHz with clock failure detection and 32.768 kHz for
RTT or device clock
̶ High-precision 8/16/24 MHz factory-trimmed internal RC oscillator. In-application trimming access for
frequency adjustment
̶ Slow clock internal RC oscillator as permanent Low-power mode device clock
̶ PLL range from 24 MHz to 48 MHz for device clock
̶ 28 peripheral DMA (PDC) channels
̶ 256-bit General-Purpose Registers (GPBR)
̶ 16 external interrupt lines
Power consumption in Active mode
̶ 102 µA/MHz running Fibonacci in SRAM
Low power modes (typical value)
̶ Wait mode down to 8 µA
̶ Wake-up time less than 5 µs
̶ Asynchronous partial wake-up (SleepWalking™) on UART and TWI
Peripherals
̶ One USART with SPI mode
̶ Two Inter-IC Sound Controllers (I
2
S)
̶ Two-way one-channel Pulse Density Modulation (PDM) (interfaces up to two microphones in PDM
mode)
̶ Two UARTs
̶ Three Two-Wire Interface (TWI) modules featuring two TWI masters and one high-speed TWI slave
̶ One fast SPI at up to 24Mbit/s
̶ Two three-channel 16-bit Timer/Counters (TC) with Capture, Waveform, Compare and PWM modes
̶ One 32-bit Real-Time Timer (RTT)
I/O
̶ Up to 38 controllable I/O lines with external interrupt capability (edge or level sensitivity), debouncing,
glitch filtering and on-die series resistor termination. Individually programmable open-drain, pull-up
and pull-down resistor and synchronous output
