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SS1F4-M3/H

P1-P3P4-P6
SS1F4
www.vishay.com
Vishay General Semiconductor
Revision: 04-Nov-16
1
Document Number: 87729
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Schottky Barrier Rectifiers
FEATURES
• Low profile package
• Ideal for automated placement
• Low forward voltage drop, low power losses
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Wave and reflow solderable
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial, industrial,
and automotive applications.
MECHANICAL DATA
Case: DO-219AB (SMF)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Note
(1)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
40 V
I
FSM
40 A
V
F
at I
F
= 1.0 A (T
A
= 125 °C) 0.37 V
T
J
max. (AC mode) 150 °C
T
J
max. (DC forward current) 175 °C
Package DO-219AB (SMF)
Diode variations Single die
Top view Bottom view
DO-219AB (SMF)
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS1F4 UNIT
Device marking code 14
Maximum repetitive peak reverse voltage V
RRM
40 V
Maximum average forward rectified current (fig.1) I
F(AV)
(1)
1.0 A
Peak forward surge current 8.3 ms single half
sine-wave T
J (init)
= 25 °C
I
FSM
40 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
Junction temperature in DC forward current without reverse bias T
J
175 °C
SS1F4
www.vishay.com
Vishay General Semiconductor
Revision: 04-Nov-16
2
Document Number: 87729
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
<1/R
JA
(2)
Device mounted on FR4 PCB, 2 oz. standard footprint
(3)
Thermal resistance R
JA
- junction to ambient; R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 0.7 A
T
A
= 25 °C
V
F
(1)
0.43 -
V
I
F
= 1.0 A 0.46 0.52
I
F
= 0.7 A
T
A
= 125 °C
0.33 -
I
F
= 1.0 A 0.37 0.43
Reverse current V
R
= 40 V
T
A
= 25 °C
I
R
(2)
-150μA
T
A
= 125 °C 7 25 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
85 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °c unless otherwise noted)
PARAMETER SYMBOL SS1F4 UNIT
Typical thermal resistance
R
JA
(1)(2)(3)
125
°C/W
R
JM
(2)(3)
16.5
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS1F4-M3/H 0.015 H 3000 7" diameter plastic tape and reel
SS1F4-M3/I 0.015 I 10 000 13" diameter plastic tape and reel
SS1F4HM3/H
(1)
0.015 H 3000 7" diameter plastic tape and reel
SS1F4HM3/I
(1)
0.015 I 10 000 13" diameter plastic tape and reel
SS1F4
www.vishay.com
Vishay General Semiconductor
Revision: 04-Nov-16
3
Document Number: 87729
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Average Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 255075100125150175
Average Forward Rectied Current (A)
Ambient Temperature (°C)
Mounted on recommended areas, FR4
PCB, typical values
R
θJM
= 16.5 °C/W
R
θJM
= 125 °C/W
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
D = 0.5
0.1
1
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 175 °C
0.001
0.01
0.1
1
10
100
10 15 20 25 30 35 40
Instantaneous Reverse Current (mA)
Reverse Voltage (V)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
10
100
1000
0 10203040
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
si
g
= 50 mV
p
-
p
1
10
100
1000
0.001 0.1 10 1000
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
Mounted on standard footprint
FR4 PCB
P1-P3P4-P6

SS1F4-M3/H

Mfr. #:
Buy SS1F4-M3/H
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 1A,40V,SMF SCHOTTKY RECT
Lifecycle:
New from this manufacturer.
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