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NTD4858NA-35G

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 3
1 Publication Order Number:
NTD4858N/D
NTD4858N
Power MOSFET
25 V, 73 A, Single N−Channel, DPAK/IPAK
Features
• Trench Technology
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• VCORE Applications
• DC−DC Converters
• High/Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
25 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
14
A
T
A
= 85°C 10.9
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.0 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
ID
11.2
A
T
A
= 85°C 8.7
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
1.3 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
73
A
T
C
= 85°C 56
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
54.5 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
146 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
45 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+175
°C
Source Current (Body Diode) I
S
45 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 15 A
pk
, L = 1.0 mH, R
G
= 25 W)
EAS 112.5 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
25 V
6.2 mW @ 10 V
73 A
9.3 mW @ 4.5 V
G
S
N−CHANNEL MOSFET
D
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
AYWW
48
58NG
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Sourc
e
4
Drain
2
Drain
1
Gate
3
Source
AYWW
48
58NG
AYWW
48
58NG
A = Assembly Location*
Y = Year
WW = Work Week
4858N = Device Code
G = Pb−Free Package
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
IPAK
CASE 369D
(Straight Lead
DPAK) STYLE
2
1
2
3
4
1
2
3
4
IPAK
CASE 369AD
(Straight Lead)
STYLE 2
1
2
3
4
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD4858N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
2.75
°C/W
Junction−to−TAB (Drain)
R
q
JC−TAB
3.5
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
73.5
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
116
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
25 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
22
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.45 2.5 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
5.3
mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 30 A 5.2 6.2
mW
V
GS
= 4.5 V I
D
= 30 A 7.3 9.3
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 15 A 55 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
1563
pF
Output Capacitance C
OSS
405
Reverse Transfer Capacitance C
RSS
200
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A
12.8 19.2
nC
Threshold Gate Charge Q
G(TH)
1.3
Gate−to−Source Charge Q
GS
4.7
Gate−to−Drain Charge Q
GD
5.2
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V, I
D
= 30 A 25.7 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
12.6
ns
Rise Time t
r
20.2
Turn−Off Delay Time t
d(OFF)
16.4
Fall Time t
f
5.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4858N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified) (continued)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
7.7
ns
Rise Time t
r
17.3
Turn−Off Delay Time t
d(OFF)
23.8
Fall Time t
f
2.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.87 1.2
V
T
J
= 125°C 0.73
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
11.6
ns
Charge Time t
a
7.8
Discharge Time t
b
3.7
Reverse Recovery Charge Q
RR
3.0 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
2.49
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK L
D
1.88
Gate Inductance L
G
3.46
Gate Resistance R
G
0.7
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6P7-P9

NTD4858NA-35G

Mfr. #:
Buy NTD4858NA-35G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 25V 73A 0.0062R DPAK
Lifecycle:
New from this manufacturer.
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