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2N7002WT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 6
1 Publication Order Number:
2N7002W/D
2N7002W, 2V7002W
Small Signal MOSFET
60 V, 340 mA, Single, N−Channel, SC−70
Features
• ESD Protected
• Low R
DS(on)
• Small Footprint Surface Mount Package
• 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Low Side Load Switch
• Level Shift Circuits
• DC−DC Converter
• Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage V
GS
±20 V
Drain Current (Note 1)
Steady State T
A
= 25°C
T
A
= 85°C
t < 5 s T
A
= 25°C
T
A
= 85°C
I
D
310
220
340
240
mA
Power Dissipation (Note 1)
Steady State
t < 5 s
P
D
280
330
mW
Pulsed Drain Current (t
p
= 10 ms)
I
DM
1.4 A
Operating Junction and Storage
Temperature Range
T
J
, T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
250 mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Gate−Source ESD Rating
(HBM, Method 3015)
ESD 2000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Junction−to−Ambient − Steady State
(Note 1)
R
q
JA
450
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
R
q
JA
375
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
Device Package Shipping
†
ORDERING INFORMATION
2N7002WT1G 3000/Tape & Reel
SIMPLIFIED SCHEMATIC
SC−70/SOT−323
CASE 419
STYLE 8
71 MG
G
71 = Device Code
M = Date Code
G = Pb−Free Package
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
Gate Source
www.onsemi.com
SC−70
(Pb−Free)
60 V
1.6 W @ 10 V
R
DS(on)
MAX
340 mA
I
D
MAX
(Note 1)
V
(BR)DSS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
2.5 W @ 4.5 V
Gate
Source
Drain
3
2
1
(Top View)
(Note: Microdot may be in either location)
2V7002WT1G 3000/Tape & ReelSC−70
(Pb−Free)
2N7002W, 2V7002W
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
71 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C 1.0
mA
T
J
= 150°C 15
mA
V
GS
= 0 V,
V
DS
= 50 V
T
J
= 25°C 100 nA
T
J
= 150°C 10
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±10
mA
V
DS
= 0 V, V
GS
= ±10 V 450 nA
V
DS
= 0 V, V
GS
= ±5.0 V 150 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 2.5 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 500 mA 1.19 1.6 W
V
GS
= 4.5 V, I
D
= 200 mA 1.33 2.5
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= 20 V
24.5
pF
Output Capacitance C
OSS
4.2
Reverse Transfer Capacitance C
RSS
2.2
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10 V;
I
D
= 200 mA
0.7
nC
Threshold Gate Charge Q
G(TH)
0.1
Gate−to−Source Charge Q
GS
0.3
Gate−to−Drain Charge Q
GD
0.1
SWITCHING CHARACTERISTICS, V
GS
= V (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DD
= 25 V,
I
D
= 500 mA, R
G
= 25 W
12.2
ns
Rise Time t
r
9.0
Turn−Off Delay Time t
d(OFF)
55.8
Fall Time t
f
29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= 200 mA
T
J
= 25°C 0.8 1.2
V
T
J
= 85°C 0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
2N7002W, 2V7002W
www.onsemi.com
3
TYPICAL CHARACTERISTICS
5.0 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6420
0
0.4
0.8
1.2
1.6
6420
0
0.4
0.8
1.2
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
I
D
, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.4
0.8
1.2
1.6
2.0
3.2
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
V
GS
, GATE−TO−SOURCE VOLTAGE (V) T
J
, JUNCTION TEMPERATURE (°C)
108642
0.4
0.8
1.6
2.4
1251007550250−25−50
0.6
1.0
1.4
1.8
2.2
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
V
GS
= 10 V
7.0 V
8.0 V
9.0 V
4.5 V
4.0 V
6.0 V
3.5 V
3.0 V
2.5 V
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
V
GS
= 4.5 V
I
D
, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.8
1.6
2.4
3.2
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
V
GS
= 10 V
I
D
= 500 mA
I
D
= 200 mA
150
I
D
= 0.2 A
V
GS
= 4.5 V
V
GS
= 10 V
1.2
2.0
2.4
2.8
0.4
1.2
2.0
2.8
P1-P3P4-P5

2N7002WT1G

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Buy 2N7002WT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET SMALL SIGNAL MOSFET 6.8V LO C
Lifecycle:
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