Radar Pulsed Power Transistor
9W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty
M/A-COM Products
Released, 10 Jul 07
PH3134-9L
1
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
Electrical Specifications: T
C
= 25 ± 5°C (Room Ambient )
Parameter Test Conditions Frequency Symbol Min Max Units
Collector-Emitter Breakdown Voltage I
C
= 12.5mA BV
CES
60 - V
Collector-Emitter Leakage Current V
CE
= 36V I
CES
- 1.25 mA
Thermal Resistance Vcc = 36V, Pout = 9W F = 3.1, 3.25, 3.4 GHz
R
TH(JC)
- 2.7 °C/W
Input Power Vcc = 36V, Pout = 9W F = 3.1, 3.25, 3.4 GHz
P
IN
- 1.43 W
Power Gain Vcc = 36V, Pout = 9W F = 3.1, 3.25, 3.4 GHz
G
P
8.0 - dB
Collector Efficiency Vcc = 36V, Pout = 9W F = 3.1, 3.25, 3.4 GHz
η
C
35 - %
Input Return Loss Vcc = 36V, Pout = 9W F = 3.1, 3.25, 3.4 GHz
RL - -6 dB
Load Mismatch Tolerance Vcc = 36V, Pout = 9W F = 3.25 GHz
VSWR-T - 2:1 -
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage V
CES
60 V
Emitter-Base Voltage V
EBO
3.0 V
Collector Current (Peak) I
C
1.1 A
Power Dissipation @ +25°C P
TOT
65 W
Storage Temperature T
STG
-65 to +200 °C
Junction Temperature T
J
200 °C
Outline Drawing
