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IRF510SPBF

P1-P3P4-P6P7-P8
IRF510S, SiHF510S
www.vishay.com
Vishay Siliconix
S15-2693-Rev. D, 16-Nov-15
4
Document Number: 91016
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
25
°
C
175
°
C
V
GS
= 0 V
10
-1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.5 0.90.80.70.6 1.0 1.21.1
91016_07
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 175 °C
single pulse
0.1
10
2
2
5
1
2
5
10
2
5
25
1
10
25
10
2
25
10
3
91016_08
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1 1 10
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal response)
0 - 0.5
0.2
0.1
0.05
0.02
0.01
91016_11
IRF510S, SiHF510S
www.vishay.com
Vishay Siliconix
S15-2693-Rev. D, 16-Nov-15
5
Document Number: 91016
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
R
g
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
10 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
300
0
50
100
150
200
250
25 1501251007550
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
2.3 A
4.0 A
5.6 A
V
DD
= 25 V
175
91016_12c
Q
GS
Q
GD
Q
G
V
G
Charge
V
GS
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
IRF510S, SiHF510S
www.vishay.com
Vishay Siliconix
S15-2693-Rev. D, 16-Nov-15
6
Document Number: 91016
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91016
.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 V
a
I
SD
Driver gate drive
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
•
I
SD
controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
Note
a. V
GS
= 5 V for logic level devices
V
DD
P1-P3P4-P6P7-P8

IRF510SPBF

Mfr. #:
Buy IRF510SPBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-Chan 100V 5.6 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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