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AMMC-5024-W10

P1-P3P4-P6P7-P9P10-P10
AMMC-5024
30 KHz – 40 GHz Traveling Wave Amplier
Data Sheet
Features
• Wide frequency range: 30 KHz – 40 GHz
• High gain: 16 dB
• Gain atness: ±0.75 dB
•
Return loss:
Input: 13 dB, Output: 13 dB
• Medium power: P-1dB=22.5 dBm at 22 GHz
• Low noise gure: 4.6 dB at 26 GHz
Applications
• Communication systems
• Microwave instrumentation
• Optical systems
• Broadband applications requiring at gain and group
delay with excellent input and output port matches over
the 30 KHz and 40 GHz frequency range
Absolute Maximum Ratings
[1]
Symbol Parameters/Conditions Units Min. Max.
V
dd
Positive Drain Voltage V 10
I
dd
Total Drain Current mA 340
V
g1
First Gate Voltage V -9.5 0
I
g1
First Gate Current mA -38 +1
V
g2
Second Gate Voltage V -3.5 +4
I
g2
Second Gate Current mA -20
P
in
CW Input Power dBm 17
T
ch
Operating Channel Temperature °C +150
T
b
Operating Backside Temperature °C -55
T
stg
Storage Temperature °C -65 +165
T
max
Max. Assembly Temp (60 sec max) °C +300
Notes:
1. Absolute maximum ratings for continuous operation unless otherwise noted.
Description
Avago Technologies' AMMC-5024 is a broadband PHEMT
GaAs MMIC TWA designed for medium output power
and high gain over the full 30 KHz to 40 GHz frequency
range. The design employs a 9-stage,cascade-connected
FET structure to ensure at gain and power as well as uni-
form group delay. E-beam lithography is used to produce
uniform gate lengths of 0.15 mm and MBE technology as-
sures precise semiconductor layer control. For improved
reliability and moisture protection, the die is passivated
at the active areas.
Chip Size: 2350 x 1050 µm (92.5 x 41.3 mils)
Chip Size Tolerance: ±10 µm (±0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (2.95 ± 0.4 mils)
2
AMMC-5024 DC Specications/Physical Properties
[1]
Symbol Parameters and Test Conditions Units Min. Typ. Max.
I
dss
Saturated Drain Current (V
dd
=7 V, V
g1
=0 V, V
g2
=open circuit) mA 265 350 385
V
p
First Gate Pinch-o Voltage (V
dd
=7 V, I
dd
=30 mA, V
g2
=open circuit) V -8.2
V
g2
Second Gate Self-bias Voltage (V
dd
=7 V, I
dd
= 200 mA, V
g2
=open circuit) V 2.75
I
dsmin
First Gate Minimum Drain Current mA 47
(V
g1
) (V
dd
=7 V, V
g1
=-7 V, V
g2
=open circuit)
I
dsmin
Second Gate Minimum Drain Current mA 105
(V
g2
) (V
dd
=7 V, V
g1
=0 V, V
g2
= -3.5 V)
θ
ch-b
Thermal Resistance
[2]
(Backside temperature, T
b
= 25°C) °C/W 16.2
RF Specications for High Gain and Low Power Applications
[2, 3]
(V
dd
=4 V, I
dd
(Q)=160 mA, Z
in
= Z
o
=50Ω)
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S
21
|
2
Small-signal Gain dB 17.5
∆|S
21
|
2
Small-signal Gain Flatness dB ±1.5
RL
in
Minimum Input Return Loss dB 13
RL
out
Minimum Output Return Loss dB 13
|S
12
|
2
Isolation dB 30
P
-1dB
Output Power @ 1 dB Gain Compression f = 22 GHz dBm 17.3
P
sat
Saturated Output Power f = 22 GHz dBm 20.5
OIP3 Output 3
rd
Order Intercept Point, dBm 22.5
Rf
in1
= Rf
in2
= 2 dBm, f = 22 GHz, ∆f = 2 MHz
NF Noise Figure f = 26 GHz dB 3.7
f = 40 GHz dB 5.5
Notes:
1. Backside temperature T
b
= 25°C unless otherwise noted.
2. Channel to board Thermal Resistance is measured using QFI method.
3. 100% on-wafer RF test is done at frequency = 2, 10, 20, 30 and 40 GHz, except as noted.
RF Specications for High Power Applications
[2, 3]
(V
dd
=7 V, I
dd
(Q)=200 mA, Z
in
= Z
o
=50Ω
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S
21
|
2
Small-signal Gain dB 14 16 18
∆|S
21
|
2
Small-signal Gain Flatness dB ±0.75 ±2
RL
in
Input Return Loss dB 12 16.9
RL
out
Output Return Loss dB 10 16.8
|S
12
|
2
Isolation dB 26 28
P
-1dB
Output Power @ 1 dB Gain Compression f = 22 GHz dBm 21 22.5
P
sat
Saturated Output Power f = 22 GHz dBm 23 24.5
OIP3 Output 3
rd
Order Intercept Point, dBm 27 30
Rf
in1
= Rf
in2
= 2 dBm, f = 22 GHz, ∆f = 2 MHz
NF Noise Figure (V
ds
= 3V, I
ds
= 140 mA) f = 26 GHz dB 4.6 6.5
f = 40 GHz dB 7.2 9
3
AMMC-5024 Typical Performance (T
chuck
= 25°C, V
dd
= 7V, I
dd
= 200 mA, V
g2
= Open, Z
0
= 50Ω)
Figure 1. Gain and Reverse Isolation.
FREQUENCY (GHz)
S21 (dB)
S12 (dB)
0 5010 20 30 40
20
18
16
14
12
10
8
6
4
2
0
0
-20
-40
-60
-80
S21(dB)
S12(dB)
Figure 2. Return Loss (Input and Output).
FREQUENCY (GHz)
RETURN LOSS (dB)
0 5010 20 30 40
0
-5
-10
-15
-20
-25
-30
S11(dB)
S22(dB)
Figure 3. Output Power (P-1 and P-3).
FREQUENCY (GHz)
P-1, P-3 (dBm)
0 5010 20 30 40
30
25
20
15
10
5
0
P-1
P-3
Figure 4. Group Delay.
FREQUENCY (GHz)
td (nS)
0 5010 20 30 40
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
Figure 5. Noise Figure.
FREQUENCY (GHz)
NOISE FIGURE (dB)
0 5010 20 30 40
10
8
6
4
2
0
Figure 6. Output IP3.
FREQUENCY (GHz)
OIP3 (dBm)
0 5010 20 30 40
40
30
20
10
0
P1-P3P4-P6P7-P9P10-P10

AMMC-5024-W10

Mfr. #:
Buy AMMC-5024-W10
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Amplifier GaAs MMIC TWA
Lifecycle:
New from this manufacturer.
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