MMBD4448H
Document number: DS30176 Rev. 10 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated
MMBD4448H
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
80 V
RMS Reverse Voltage
V
R
RMS
57 V
Forward Continuous Current (Note 3)
I
FM
500 mA
Average Rectified Output Current (Note 3)
I
O
250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
s
@ t = 1.0s
I
FSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
P
D
350 mW
Thermal Resistance Junction to Ambient Air (Note 3)
R
JA
357
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 4)
V
BR
R
80
⎯
V
I
R
= 2.5μA
Forward Voltage
V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Reverse Current (Note 4)
I
R
⎯
100
50
30
25
nA
μA
μA
nA
V
R
= 70V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
Total Capacitance
C
T
⎯
3.5 pF
V
R
= 6V, f = 1.0MHz
Reverse Recovery Time
t
r
⎯
4.0 ns
V
R
= 6V, I
F
= 5mA
Notes: 3. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
4. Short duration pulse test used to minimize self-heating effect.
0
1208040 160
200
T , AMBIENT TEMPERATURE (ºC)
Fig. 1 Power Derating Curve (Note 3)
A
,
WE
DISSI
A
I
(mW)
D
0
100
200
300
400
500
10
100
1,000
1
0.1
0
1.61.20.4
0.8
I, INS
AN
ANE
S
WA
D
EN
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T = 125ºC
A
T = -40ºC
A
T = 75ºC
A
T = 25ºC
A
T = 0ºC
A