FDB5645 Datasheet FDB5645, FDP5645 | P1-P3

March 2000

 2000 Fairchild Semiconductor Corporation

FDP5645/FDB5645 Rev B (W)

FDP5645/FDB5645

60V N-Channel PowerTrench

®

MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R

DS(ON)

specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Features

• 80 A, 60 V. R

DS(ON)

= 0.0095 Ω @ V

GS

= 10 V

R

DS(ON)

= 0.011 Ω @ V

GS

= 6 V.

• Critical DC electrical parameters specified at

elevated temperature.

• Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient

suppressor.

• High performance trench technology for extremely

low R

DS(ON)

.

• 175°C maximum junction temperature rating.

S

G

D

TO-220

FDP Series

D

G

S

TO-263AB

FDB Series

S

D

G

Absolute Maximum Ratings T

A

=25

o

C unless otherwise noted

Symbol Parameter FDP5645 FDB5645 Units

V

DSS

Drain-Source Voltage 60 V

V

GSS

Gate-Source Voltage

±20

V

I

D

Maximum Drain Current – Continuous (note 3) 80 A

– Pulsed 300

Total Power Dissipation @ T

C

= 25°C

125 WP

D

Derate above 25°C

0.83

W/°C

T

J

, T

STG

Operating and Storage Junction Temperature Range -65 to +175

°C

T

L

Maximum lead termperature for soldering purposes,

1/8“ from case for 5 seconds

+275

°C

Thermal Characteristics

R

θJC

Thermal Resistance, Junction-to-Case 1.2 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient 62.5

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDB5645 FDB5645 13” 24mm 800 units

FDP5645 FDP5645

note 2

FDP5645/FDB5645

FDP5645/FDB5645 Rev. B (W)

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)

W

DSS

Single Pulse Drain-Source

Avalanche Energy

V

DD

= 40 V, I

D

= 80 A 800 mJ

I

AR

Maximum Drain-Source Avalanche

Current

80 A

Off Characteristics

BV

DSS

Drain–Source Breakdown Voltage

V

GS

= 0 V, I

D

= 250 µA

60 V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250 µA, Referenced to 25°C 64 mV/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 48 V, V

GS

= 0 V 1

µA

I

GSSF

Gate–Body Leakage, Forward V

GS

= 20 V, V

DS

= 0 V 100 nA

I

GSSR

Gate–Body Leakage, Reverse V

GS

= 20 V, V

DS

= 0 V –100 nA

On Characteristics (Note 1)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250 µA

2 4 V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

I

D

= 250 µA, Referenced to 25°C

-7.8 mV/°C

R

DS(on)

Static Drain–Source

On–Resistance

V

GS

= 10 V, I

D

= 40 A

V

GS

=10V, I

D

= 40 A, T

J

=125°C

V

GS

= 6 V, I

D

= 38 A

8

13

9

9.5

18

11

mΩ

I

D(on)

On–State Drain Current V

GS

= 10 V, V

DS

= 10 V 60 A

g

FS

Forward Transconductance V

DS

= 5 V, I

D

= 40 A 88 S

Dynamic Characteristics

C

iss

Input Capacitance 4468 pF

C

oss

Output Capacitance 810 pF

C

rss

Reverse Transfer Capacitance

V

DS

= 30 V, V

GS

= 0 V,

f = 1.0 MHz

198 pF

Switching Characteristics (Note 2)

t

d(on)

Turn–On Delay Time 21 30 ns

t

r

Turn–On Rise Time 13 20 ns

t

d(off)

Turn–Off Delay Time 77 90 ns

t

f

Turn–Off Fall Time

V

DD

= 30 V, I

D

= 1 A,

V

GS

= 10 V, R

GEN

= 6 Ω

42 50 ns

Q

g

Total Gate Charge 76 107 nC

Q

gs

Gate–Source Charge 18 nC

Q

gd

Gate–Drain Charge

V

DS

= 30 V, I

D

= 80 A,

V

GS

= 10 V

21 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain–Source Diode Forward Current 80 A

I

S

Maximum Pulsed Drain–Source Diode Forward Current 300 A

V

SD

Drain–Source Diode Forward

Voltage

V

GS

= 0 V, I

S

= 40 A 0.9 1.3 V

Notes:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.

3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A

FDP5645/FDB5645

FDP5645/FDB5645 Rev. B (W)

Typical Characteristics

0

20

40

60

80

100

0 1 2 3 4 5

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN-SOURCE CURRENT (A)

V

GS

= 10V

4.0V

5.0V

4.5V

6.0V

7.0V

0.8

1

1.2

1.4

1.6

1.8

2

0 20 40 60 80 100

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 4.5V

10V

5.0V

6.0V

7.0V

8.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= 42A

V

GS

= 10V

0

0.004

0.008

0.012

0.016

0.02

0.024

3 4 5 6 7 8 9 10

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 42A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 3. On-Resistance Variation

withTemperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

10

20

30

40

50

60

70

80

90

2 3 4 5 6

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

T

A

= 125

o

C

25

o

C

-55

o

C

V

DS

= 5V

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

T

A

= 125

o

C

25

o

C

-55

o

C

V

GS

= 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP5645/FDB5645

FDB5645

FDB5645

Products related to this Datasheet