VS-10ETF10S-M3, VS-10ETF12S-M3 Series
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Vishay Semiconductors
Revision: 11-Feb-16
1
Document Number: 94885
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Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-10ETF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK)
I
F(AV)
10 A
V
R
1000 V, 1200 V
V
F
at I
F
1.33 V
I
FSM
155 A
t
rr
80 ns
T
J
max. 150 °C
Diode variation Single die
Snap factor 0.6
Base
cathode
+
2
13
node
--
Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 10 A
V
RRM
1000/1200 V
I
FSM
155 A
V
F
10 A, T
J
= 25 °C 1.33 V
t
rr
1 A, 100 A/μs 80 ns
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-10ETF10S-M3 1000 1100
4
VS-10ETF12S-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 125 °C, 180° conduction half sine wave 10
A
Maximum peak one cycle non-repetitive
surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 130
10 ms sine pulse, no voltage reapplied 155
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 85
A
2
s
10 ms sine pulse, no voltage reapplied 120
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 1200 A
2
s