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VS-10ETF12S-M3

P1-P3P4-P6P7-P8
VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
4
Document Number: 94885
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
1000
10
1
0.5 1.0 1.5 2.0 2.5 4.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
10ETF.. Series
T
J
= 150 °C
T
J
= 25 °C
100
3.0 3.5 4.0
0.6
0.3
0
0 40 80 120 160 200
t
rr
- Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.1
0.2
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 1 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
0.4
0.5
0.8
0.6
0
0 40 80 120 160 200
t
rr
- Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.2
0.4
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
I
FM
= 1 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
2.0
0
0 40 80 120 160 200
Q
rr
- Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.4
1.2
0.8
1.6
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
20
12
0
0 40 80 120 160 200
I
rr
- Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
4
8
16
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
5
Document Number: 94885
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
25
15
0
0 40 80 120 160 200
I
rr
- Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
5
10
20
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
0.001
1
10
100.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal Impedance (°C/W)
Single pulse
10ETF.. Series
Steady state value
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
0.01
VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
6
Document Number: 94885
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-10ETF10S-M3 50 1000 Antistatic plastic tubes
VS-10ETF10STRR-M3 800 800 13" diameter reel
VS-10ETF10STRL-M3 800 800 13" diameter reel
VS-10ETF12S-M3 50 1000 Antistatic plastic tubes
VS-10ETF12STRR-M3 800 800 13" diameter reel
VS-10ETF12STRL-M3 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?95032
10 = 1000 V
12 = 1200 V
2 - Current rating (10 = 10 A)
3 - Circuit configuration:
E = single diode
4
- Package:
T = D
2
PAK
5 - Type of silicon:
F = fast soft recovery rectifier
6 - Voltage code x 100 = V
RRM
7 - S = surface mountable
- -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
8 -
None = tube
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9
1 - Vishay Semiconductors product
Device code
51 32 4 6 7 8 9
VS- 10 E T F 12 S TRL -M3
P1-P3P4-P6P7-P8

VS-10ETF12S-M3

Mfr. #:
Buy VS-10ETF12S-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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