VS-10ETF12STRL-M3

VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
1
Document Number: 94885
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
Glass passivated pellet chip junction
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Designed and qualified according to
JEDEC
®
-JESD 47
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Output rectification and freewheeling in inverters,
choppers and converters
Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-10ETF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK)
I
F(AV)
10 A
V
R
1000 V, 1200 V
V
F
at I
F
1.33 V
I
FSM
155 A
t
rr
80 ns
T
J
max. 150 °C
Diode variation Single die
Snap factor 0.6
Base
cathode
+
2
13
A
node
--
Anode
1
2
3
TO-263AB (D
2
PAK)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 10 A
V
RRM
1000/1200 V
I
FSM
155 A
V
F
10 A, T
J
= 25 °C 1.33 V
t
rr
1 A, 100 A/μs 80 ns
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-10ETF10S-M3 1000 1100
4
VS-10ETF12S-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 125 °C, 180° conduction half sine wave 10
A
Maximum peak one cycle non-repetitive
surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 130
10 ms sine pulse, no voltage reapplied 155
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 85
A
2
s
10 ms sine pulse, no voltage reapplied 120
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 1200 A
2
s
VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
2
Document Number: 94885
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
10 A, T
J
= 25 °C 1.33 V
Forward slope resistance r
t
T
J
= 150 °C
22.9 m
Threshold voltage V
F(TO)
0.96 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 4
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 10 A
pk
25 A/μs
25 °C
310 ns
Reverse recovery current I
rr
4.7 A
Reverse recovery charge Q
rr
1.05 μC
Typical snap factor S 0.6
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 1.5
°C/W
Maximum thermal resistance,
junction to ambient (PCB mount)
R
thJA
(1)
62
Soldering temperature T
S
260 °C
Approximate weight
2g
0.07 oz.
Marking device Case style D
2
PAK (SMD-220)
10ETF10S
10ETF12S
VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
3
Document Number: 94885
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
120
115
150
0
6
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
428
130
10 12
140
125
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
Conduction angle
30°
60°
90°
120° 180°
145
135
Ø
120
115
150
010
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
6
212
130
16
135
125
48 14
140
145
Ø
Conduction period
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
30°
60°
90°
120°
180°
DC
4
0
16
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
8
10
10
12
8
462
2
6
14
10ETF.. Series
T
J
= 150 °C
Conduction angle
RMS limit
180°
120°
90°
60°
30°
Ø
4
0
24
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
12
12
16
16
8
48
10ETF.. Series
T
J
= 150 °C
Ø
Conduction period
RMS limit
180°
120°
90°
60°
30°
DC
20
2
6
10
14
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
1 10 100
30
40
50
60
70
80
90
100
110
120
130
140
VS-10ETF..S Series
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.01 0.1 1 10
10
30
50
70
90
110
130
150
170
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
VS-10ETF..S Series

VS-10ETF12STRL-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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