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EK45140-02

P1-P3P4-P6P7-P9P10-P12
Page 1 of 12
Document No. DOC-44014-4 │ www.psemi.com ©2014 Peregrine Semiconductor Corp. All rights reserved.
Voltage Control and ESD
RF1
V
CTRL
RF2
P
OUT
P1dB
P
IN
Product Description
The PE45140 is a HaRP™ technology-enhanced RF
power limiter designed for use in tactical and military
communications receivers, land mobile radio and other
high performance power limiting applications.
Unlike traditional PIN diode solutions the limiting
threshold can be adjusted through a low current control
voltage (V
CTRL
), eliminating the need for external
components such as DC blocking capacitors, RF choke
inductors, and bias resistors.
This power limiter has symmetric RF ports that limit
incident power up to 50W pulsed in both biased and
unbiased conditions. It provides an extremely fast limiting
response to undesired high power signals while delivering
low insertion loss and high linearity under safe operating
power levels.
The PE45140 is manufactured on Peregrine’s
UltraCMOS
®
process, a patented variation of silicon-on-
insulator (SOI) technology on a sapphire substrate.
Peregrine’s HaRP™ technology enhancements deliver
high linearity and excellent harmonics performance. It is
an innovative feature of the UltraCMOS process, offering
the performance of GaAs with the economy and
integration of conventional CMOS.
Product Specification
UltraCMOS
®
Power Limiter
20 MHz–2 GHz
Figure 1. Functional Diagram
PE45140
Features
 Monolithic drop in solution with no
external components required
 Adjustable power limiting threshold
from +22 dBm to +32 dBm
 Max power handling
 +47 dBm Pulsed (50W)
 +40 dBm CW (10W)
 Superior ESD rating and ESD protection
 8 kV HBM on RF pins to GND
 1 kV CDM on all pins
 200V MM on all pins
 Unbiased power limiting operation
 Fast response and recovery time of 1 ns
 Dual mode operation
 Power limiting mode
 Power reflecting mode
Figure 2. Package Type
12-lead 3x3 mm QFN
DOC-62357
Product Specification
PE45140
Page 2 of 12
Document No. DOC-44014-4 │ UltraCMOS
®
RFIC Solutions ©2014 Peregrine Semiconductor Corp. All rights reserved.
Table 1. Electrical Specifications @ +25°C (Z
S
= Z
L
= 50Ω), unless otherwise noted
Parameter Condition
Min
Typ
Max
Unit
Operating frequency 20 2000 MHz
Power limiting mode
Insertion loss
20 MHz–1 GHz
1–2 GHz
0.20
0.60
0.45
1.00
dB
dB
Return loss
20 MHz–1 GHz
1–2 GHz
16
10
dB
dB
P1dB / limiting threshold
V
CTRL
= –2.5V @ 915 MHz
V
CTRL
= –0.5V @ 915 MHz
32
22
dBm
dBm
Leakage power
1
V
CTRL
= –2.5V @ 915 MHz
V
CTRL
= –0.5V @ 915 MHz
31.5
29
34
31.5
dBm
dBm
Leakage power slope V
CTRL
= –1.0V @ 915 MHz 0.4 dB/dB
Unbiased leakage power
1
V
CTRL
= 0V 23.5 27 dBm
Input IP2 V
CTRL
= –2.5V @ 915 MHz 104 dBm
Input IP3 V
CTRL
= –2.5V @ 915 MHz 64 dBm
Response / recovery time 1 GHz 1 ns
Leakage power
1
V
CTRL
= +2.5V @ 915 MHz –1 4.5 dBm
Switching time
3
State change to 10% RF 390 µs
Power reflecting mode
2
Notes: 1. Measured with +40 dBm CW applied at input.
2. This mode requires the control voltage to toggle between +2.5V and -2.5V. At +2.5V, the limiter equivalent
circuit is a low impedance to ground, reflecting most of the incident power back to the source.
3. State change is V
CTRL
toggle from –2.5V to +2.5V.
Product Specification
PE45140
Page 3 of 12
Document No. DOC-44014-4 │ www.psemi.com ©2014 Peregrine Semiconductor Corp. All rights reserved.
Figure 3. Pin Configuration (Top View)
Table 2. Pin Descriptions
Pin No. Pin Name Description
1, 3, 4, 6,
7, 9
GND Ground
2 RF1* RF port 1
5 V
CTRL
Control
8 RF2* RF port 2
Pad GND Exposed pad: Ground for proper operation
11 V
DC
DC voltage
10, 12 N/C No connect
V
CTRL
GND
GND
N/C
V
DC
N/C
Table 3. Operating Ranges
Parameter
Symbol
Min Typ Max Unit
DC voltage V
DC
2.5 3.3 V
Control voltage
Power limiting mode
Power reflecting mode
V
CTRL
–2.5
–2.5
–0.5
+2.5
V
V
RF input power, CW
1
P
MAX,CW
40 dBm
RF input power, pulsed
2
P
MAX,PULSED
47 dBm
RF input power, unbiased
2,3
P
MAX,UNB
47 dBm
Operating temperature
range
T
OP
–55 +25 +85 °C
Operating junction
temperature
1
T
J
+270 °C
Table 4. Absolute Maximum Ratings
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be
restricted to the limits in the Operating Ranges
table. Operation between operating range
maximum and absolute maximum for extended
periods may reduce reliability.
Notes: 1. Human Body Model (HBM, MIL_STD 883 Method 3015.7)
2. Machine Model (JEDEC JESD22-A115)
3. Charged Device Model (JEDEC JESD22-C101)
Parameter
Symbol
Min Max Unit
DC voltage V
DC
-0.3 3.6 V
Control voltage
Power limiting mode
Power reflecting mode
V
CTRL
–3.3 3.6 V
Storage temperature range T
ST
–65 +150 °C
ESD voltage HBM
1
All pins
RF pins to GND
V
ESD,HBM
7000
8000
V
V
ESD voltage MM
2
, all pins V
ESD,MM
200 V
ESD voltage CDM
3
, all pins V
ESD,CDM
1000 V
Notes: 1. CW, 100% duty cycle, in 10 min, 50Ω
2. Pulsed, 0.1% duty cycle of 1 µs pulse width in 10 min, 50Ω
3. V
CTRL
= 0V or V
CTRL
pin left not connected
Note: * RF pins 2 and 8 must be at 0 VDC. The RF pins do not require DC
blocking capacitors for proper operation if the 0 VDC requirement is
met.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
PE45140 in the 12-lead 3x3 mm QFN package is
MSL1.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified.
P1-P3P4-P6P7-P9P10-P12

EK45140-02

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