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SI4378DY-T1-GE3

P1-P3P4-P6P7-P8
Vishay Siliconix
Si4378DY
Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• Ultra Low On-Resistance Using High
Density TrenchFET
®
Gen II Power MOSFET
Technology
•Q
g
Optimized
• 100 % R
g
Tested
APPLICATIONS
• Synchronous Rectification
• Point-Of-Load
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
20
0.0027 at V
GS
= 4.5 V
25
0.0042 at V
GS
= 2.5 V
22
S
S
D
D
D
S
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4378DY-T1-E3 (Lead (Pb)-free)
Si4378DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
25 19
A
T
A
= 70 °C
20 13
Pulsed Drain Current (10 µs Pulse Width)
I
DM
70
Continuous Source Current (Diode Conduction)
a
I
S
2.9 1.3
Avalanche Current L = 0.1 mH
I
AS
40
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.5 1.6
W
T
A
= 70 °C
2.2 1
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
29 35
°C/W
Steady State 67 80
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
13 16
www.vishay.com
2
Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
Vishay Siliconix
Si4378DY
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.6 1.8 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
5
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 4.5 V
30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 25 A
0.0022 0.0027
Ω
V
GS
= 2.5 V, I
D
= 22 A
0.0034 0.0042
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 25 A
150 S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.72 1.1 V
Dynamic
b
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
8500
pFOutput Capacitance
C
oss
1250
Reverse Transfer Capacitance
C
rss
650
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 25 A
55
nCGate-Source Charge
Q
gs
16
Gate-Drain Charge
Q
gd
10
Gate Resistance
R
g
0.8 1.3 2.0 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 1 A, V
GEN
= 4.5 V, R
g
= 6 Ω
85 130
ns
Rise Time
t
r
65 100
Turn-Off Delay Time
t
d(off)
140 210
Fall Time
t
f
50 80
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, dI/dt = 100 A/µs
50 80
Output Characteristics
0
10
20
30
40
50
60
012345
V
GS
= 5 V thru 2.5 V
2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
Transfer Characteristics
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
www.vishay.com
3
Vishay Siliconix
Si4378DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.001
0.002
0.003
0.004
0.005
0.006
0 102030405060
V
GS
= 2.5 V
- On-Resistance (R
DS(on)
)
I
D
- Drain Current (A)
V
GS
= 4.5 V
0
1
2
3
4
5
6
0 10203040506070
V
DS
= 10 V
I
D
= 25 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
1.0 1.2
1
10
50
0.00 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
2000
4000
6000
8000
10000
0 4 8 12 16 20
C
rss
V
DS
-
Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 25 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.000
0.003
0.006
0.009
0.012
0.015
0246810
I
D
= 25 A
- On-Resistance (R
DS(on)
)
V - Gate-to-Source Voltage (V)
GS
P1-P3P4-P6P7-P8

SI4378DY-T1-GE3

Mfr. #:
Buy SI4378DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4186DY-GE3
Lifecycle:
New from this manufacturer.
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