2N1711S Datasheet 2N1711S, JANTX2N1711S | P1-P3

TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/225

Devices

Qualified Level

2N1711 2N1890

JAN

JANTX

MAXIMUM RATINGS

Ratings Symbol 2N1711 2N1890 Unit

Collector-Base Voltage

V

CBO

75 100 Vdc

Emitter-Base Voltage

V

EBO

7.0 Vdc

Collector Current

I

C

500 mAdc

Total Power Dissipation @ T

A

= +25

0

C

(1)

@ T

C

= +25

0

C

(2)

P

T

0.8

3.0

W

Operating & Storage Junction Temperature Range

T

J

,

T

stg

-65 to +200

0

C

THERMAL CHARACTERISTICS

Characteristics Symbol Max. Unit

Thermal Impedance

Z

θJX

58

0

C/W

1) Derate linearly 4.57 mW/

0

C for T

A

> 25

0

C

2) Derate linearly 17.2 mW/

0

C for T

C

> 25

0

C

TO-5*

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

I

C

= 100 µAdc 2N1711, S

2N1890, S

V

(BR)

CBO

75

100

Vdc

Collector-Emitter Breakdown Voltage

R

BE

= 10 Ω, I

C

= 100 mAdc 2N1711, S

2N1890, S

V

(BR)

CER

50

80

Vdc

Collector-Emitter Breakdown Voltage

I

C

= 30 mAdc 2N1711, S

2N1890, S

V

(BR)

CEO

30

60

Vdc

Emitter-Base Breakdown Voltage

I

E

= 100 µAdc

V

(BR)

EBO

7.0

Vdc

Collector-Base Cutoff Current

V

CB

= 60 Vdc 2N1711

V

CB

= 80 Vdc 2N1890

I

CBO

10

ηAdc

Emitter-Base Cutoff Current

V

EB

= 5.0 Vdc

I

EBO

5.0

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N1711, 2N1890 JAN SERIES

Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS

(3)

Forward-Current Transfer Ratio

I

C

= 10 µAdc, V

CE

= 10 Vdc

I

C

= 150 mAdc, V

CE

= 10 Vdc

I

C

= 500 mAdc, V

CE

= 10 Vdc 2N1711, S

h

FE

20

100

50

300

Collector-Emitter Saturation Voltage

I

C

= 150 mAdc, I

B

= 15 mAdc 2N1711, S

2N1890, S

I

C

= 50 mAdc, I

B

= 5.0 mAdc 2N1890, S

V

CE(sat)

1.5

5.0

1.2

Vdc

Base-Emitter Saturation Voltage

I

C

= 150 mAdc, I

B

= 15 mAdc

I

C

= 50 mAdc, I

B

= 5.0 mVdc 2N1890, S

V

BE(sat)

1.3

0.9

Vdc

DYNAMIC CHARACTERISTICS

Small-Signal Short-Circuit Forward-Current Transfer Ratio

I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc

I

C

= 5.0 mAdc, V

CE

= 10 Vdc

h

fe

80

90

200

270

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward-Current Transfer Ratio

I

C

= 50 mAdc, V

CE

= 10 Vdc; f = 20 MHz

h

fe



3.5 12

Small-Signal Short-Circuit Input Impedance

I

C

= 5.0 mAdc, V

CB

= 10 Vdc

h

ib

4.0 8.0

Ω

Small-Signal Short-Circuit Output Admittance

I

C

= 5.0 mAdc, V

CB

= 10 Vdc

2N1711, S

2N1890, S

h

ob

1.0

.03

µΩ

Output Capacitance

V

CB

= 10 Vdc, I

E

= 0, 100 kHz ≤ f ≤ 1.0 MHz 2N1711, S

2N1890, S

C

obo

8.0

5.0

25

15

pF

SWITCHING CHARACTERISTICS

Turn-On Time + Turn-Off Time

(See figure 1 of MIL-PRF-19500/225)

t

on +

t

off

30

ηs

(3) Pulse Test: Pulse Width 250 to 350µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

2N1711S

2N1711S

Products related to this Datasheet