TC74ACT08PF Datasheet TC74ACT08PF | P1-P3

TC74ACT08P/F/FT

2014-03-01

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74ACT08P, TC74ACT08F, TC74ACT08FT

Quad 2-Input AND Gate

The TC74ACT08 is an advanced high speed CMOS 2-INPUT

AND GATE fabricated with silicon gate and double-layer metal

wiring C

2

MOS technology.

It achieves the high speed operation similar to equivalent

Bipolar Schottky TTL while maintaining the CMOS low power

dissipation.

This device may be used as a level converter for interfacing

TTL or NMOS to High Speed CMOS. The inputs are compatible

with TTL, NMOS and CMOS output voltage levels.

All inputs are equipped with protection circuits against static

discharge or transient excess voltage.

Features

• High speed: t

pd

= 4.7 ns (typ.) at V

CC

= 5 V

• Low power dissipation: I

CC

= 4 μA (max) at Ta = 25°C

• Compatible with TTL outputs: V

IL

= 0.8 V (max)

V

IH

= 2.0 V (min)

• Symmetrical output impedance: |I

OH

| = I

OL

= 24 mA (min)

Capability of driving 50 Ω

transmission lines.

• Balanced propagation delays: t

pLH

∼

−

t

pHL

• Pin and function compatible with 74F08

TC74ACT08P

TC74ACT08F

TC74ACT08FT

Weight

DIP14-P-300-2.54 : 0.96 g (typ.)

SOP14-P-300-1.27A : 0.18 g (typ.)

TSSOP14-P-0044-0.65A : 0.06 g (typ.)

Start of commercial production

1988-10

TC74ACT08P/F/FT

2014-03-01

2

Pin Assignment IEC Logic Symbol

Truth Table

A B Y

L L L

L H L

H L L

H H H

Absolute Maximum Ratings (Note 1)

Characteristics Symbol Rating Unit

Supply voltage range V

CC

−0.5 to 7.0 V

DC input voltage V

IN

−0.5 to V

CC

+ 0.5 V

DC output voltage V

OUT

−0.5 to V

CC

+ 0.5 V

Input diode current I

IK

±20 mA

Output diode current I

OK

±50 mA

DC output current I

OUT

±50 mA

DC V

CC

/ground current I

CC

±100 mA

Power dissipation P

D

500 (DIP) (Note 2)/180 (SOP/TSSOP) mW

Storage temperature T

stg

−65 to 150 °C

Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or

even destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be

applied up to 300 mW.

V

CC

9

4B

4A

4Y

8

14

13

12

11

10

1A

1

2

3

4

5

6

7

2A

2B

2Y

GND

3B

3A

3Y

(top view)

1B

1Y

(4)

(9)

(5)

2A

&

3A

2B

(12)

(10)

(13)

4A

3B

(6)

(8)

(11)

2Y

3Y

4Y

4B

(1)

(2)

1A

1B

(3)

1Y

TC74ACT08P/F/FT

2014-03-01

3

Operating Ranges (Note)

Characteristics Symbol Rating Unit

Supply voltage V

CC

4.5 to 5.5 V

Input voltage V

IN

0 to V

CC

V

Output voltage V

OUT

0 to V

CC

V

Operating temperature T

opr

−40 to 85 °C

Input rise and fall time dt/dV 0 to 10 ns/V

Note: The operating ranges must be maintained to ensure the normal operation of the device.

Unused inputs must be tied to either V

CC

or GND.

Electrical Characteristics

DC Characteristics

Test Condition Ta = 25°C

Ta =

−40 to 85°C

Characteristics Symbol

V

CC

(V)

Min Typ. Max Min Max

Unit

High-level input

voltage

V

IH

― 4.5 to 5.5 2.0 ― ― 2.0 ― V

Low-level input

voltage

V

IL

― 4.5 to 5.5 ― ― 0.8 ― 0.8 V

High-level output

voltage

V

OH

V

IN

= V

IH

I

OH

= −50 μA

I

OH

= −24 mA

I

OH

= −75 mA (Note)

4.5

5.5

4.4

3.94

―

4.5

―

4.4

3.80

3.85

―

V

Low-level output

voltage

V

OL

V

IN

= V

IH

or

V

IL

I

OL

= 50 μA

I

OL

= 24 mA

I

OL

= 75 mA (Note)

4.5

5.5

―

0.0

―

0.1

0.36

―

0.1

0.44

1.65

V

Input leakage

current

I

IN

V

IN

= V

CC

or GND 5.5 ― ― ±0.1 ― ±1.0 μA

I

CC

V

IN

= V

CC

or GND 5.5 ― ― 4.0 ― 40.0 μA

Quiescent supply

current

I

C

Per input: V

IN

= 3.4 V

Other input: V

CC

or GND

5.5 ― ― 1.35 ― 1.5

mA

Note: This spec indicates the capability of driving 50 Ω transmission lines.

One output should be tested at a time for a 10 ms maximum duration.

AC Characteristics

(C

L

= 50 pF, R

L

= 500 Ω, input: t

r

= t

f

= 3 ns)

Test Condition Ta = 25°C

Ta =

−40 to 85°C

Characteristics Symbol

V

CC

(V) Min Typ. Max Min Max

Unit

Propagation delay

time

t

pLH

t

pHL

― 5.0 ± 0.5 ― 5.4 8.7 1.0 10.0 ns

Input capacitance C

IN

― ― 5 10 ― 10 pF

Power dissipation

capacitance

C

PD

(Note) ― 21 ― ― ― pF

Note: C

PD

is defined as the value of the internal equivalent capacitance which is calculated from the operating

current consumption without load.

Average operating current can be obtained by the equation:

I

CC (opr)

= C

PD

·V

CC

·f

IN

+ I

CC

/4 (per gate)

TC74ACT08PF

TC74ACT08PF

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