BC369ZL1G Datasheet BC369ZL1G, BC368G, BC368ZL1G | P1-P3

March, 2007 − Rev. 6

1 Publication Order Number:

BC368/D

NPN − BC368; PNP − BC369

Amplifier Transistors

Voltage and Current are Negative for

PNP Transistors

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

20 Vdc

Collector − Emitter Voltage V

CES

25 Vdc

Emitter − Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

1.0 Adc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

COLLECTOR

2

3

BASE

1

EMITTER

COLLECTOR

2

3

BASE

1

EMITTER

NPN PNP

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAMS

BC368ZL1G TO−92

(Pb−Free)

2000 / Ammo Pack

BC369ZL1G

TO−92

(Pb−Free)

2000 / Ammo Pack

BC368G TO−92

(Pb−Free)

5000 Units / Bulk

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 14

BC36

8

AYWW G

G

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

BC

369

AYWW G

G

NPN − BC368; PNP − BC369

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= 10 mA, I

B

= 0)

V

(BR)CEO

20 − − Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mA, I

E

= 0 )

V

(BR)CBO

25 − − Vdc

Emitter−Base Breakdown Voltage

(I

E

= 100 mA, I

C

= 0)

V

(BR)EBO

5.0 − − Vdc

Collector Cutoff Current

(V

CB

= 25 V, I

E

= 0)

(V

CB

= 25 V, I

E

= 0, T

J

= 150°C)

I

CBO

−

10

1.0

mAdc

Emitter Cutoff Current

(V

EB

= 5.0 V, I

C

= 0)

I

EBO

− − 10

mAdc

ON CHARACTERISTICS

DC Current Gain

(V

CE

= 10 V, I

C

= 5.0 mA)

(V

CE

= 1.0 V, I

C

= 0.5 A) BC368, 369

(V

CE

= 1.0 V, I

C

= 1.0 A)

h

FE

50

85

60

−

375

−

Bandwidth Product

(I

C

= 10 mA, V

CE

= 5.0 V, f = 20 MHz)

f

T

65 − − MHz

Collector−Emitter Saturation Voltage

(I

C

= 1.0 A, I

B

= 100 mA)

V

CE(sat)

− − 0.5 V

Base−Emitter On Voltage

(I

C

= 1.0 A, V

CE

= 1.0 V)

V

BE(on)

− − 1.0 V

NPN − BC368; PNP − BC369

http://onsemi.com

3

I

C

, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

I

B

, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

I

C

, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

160

40

0

V

R

, REVERSE VOLTAGE (VOLTS)

Figure 4. Temperature Coefficient

−0.8

I

C

, COLLECTOR CURRENT (mA)

Figure 5. Current−Gain — Bandwidth Product

C

obo

C

ibo

5.0

1.0

−2.4

−2.0

−1.2

V

CE

, COLLECTOR VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

VB

, TEMPERATURE COEFFICIENT (mV/ C)°θC, CAPACITANCE (pF)

1.0

0.8

0.6

0.4

0.2

0

0.01 0.1 10 1001.0

1.0

0.8

0.6

0.4

0.2

0

1.0 10 1000100

10

2.0

T

J

= 25°C

I

C

= 10 mA

T

J

= 25°C

V

BE(on)

@ V

CE

= 1.0 V

V

CE(sat)

@ I

C

/I

B

= 10

q

VB

for V

BE

C

ibo

h

FE

, CURRENT GAIN

200

20

100010 50 100

100

20

V

CE

= 1.0 V

T

J

= 25°C

70

50

200 500 0.02 0.05 0.2 0.5 2.0 5.0 20 50

50 mA

100 mA

250 mA

500 mA

1000 mA

2.0 5.0 20 50 200 500

−1.6

−2.8

1.0 10 10001002.0 5.0 20 50 200 500

120

80

15

3.0

20

4.0

25

5.0

T

J

= 25°C

C

obo

300

70

30

I

C

, COLLECTOR CURRENT (mA)

Figure 6. Capacitance

10 20 50

200

100

100 200 500

f

T

, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

50

1000

V

CE

= 10 V

T

J

= 25°C

f = 20 MHz

V

BE(sat)

@ I

C

/I

B

= 10

BC369ZL1G

BC369ZL1G

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