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BYM36C-TAP

P1-P3P4-P5
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 03-Sep-12
1
Document Number: 86012
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits
949588
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYM36E BYM36E-TR 2500 per 10" tape and reel 12 500
BYM36E BYM36E-TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYM36A V
R
= 200 V; I
F(AV)
= 3 A SOD-64
BYM36B V
R
= 400 V; I
F(AV)
= 3 A SOD-64
BYM36C V
R
= 600 V; I
F(AV)
= 3 A SOD-64
BYM36D V
R
= 800 V; I
F(AV)
= 2.9 A SOD-64
BYM36E V
R
= 1000 V; I
F(AV)
= 2.9 A SOD-64
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage
= repetitive peak reverse voltage
See electrical characteristics
BYM36A V
R
= V
RRM
200 V
BYM36B V
R
= V
RRM
400 V
BYM36C V
R
= V
RRM
600 V
BYM36D V
R
= V
RRM
800 V
BYM36E V
R
= V
RRM
1000 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
65 A
Average forward current
BYM36A I
F(AV)
3A
BYM36B I
F(AV)
3A
BYM36C I
F(AV)
3A
BYM36D I
F(AV)
2.9 A
BYM36E I
F(AV)
2.9 A
Non repetitive reverse avalanche energy I
(BR)R
= 1 A, inductive load E
R
20 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
25 K/W
On PC board with spacing 25 mm R
thJA
70 K/W
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 03-Sep-12
2
Document Number: 86012
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 3 A
BYM36A V
F
--1.6V
BYM36B V
F
--1.6V
BYM36C V
F
--1.6V
BYM36D V
F
- - 1.78 V
BYM36E V
F
- - 1.78 V
I
F
= 3 A, T
j
= 175 °C
BYM36A V
F
- - 1.22 V
BYM36B V
F
- - 1.22 V
BYM36C V
F
- - 1.22 V
BYM36D V
F
- - 1.28 V
BYM36E V
F
- - 1.28 V
Reverse current
V
R
= V
RRM
I
R
--5μA
V
R
= V
RRM
, T
j
= 150 °C I
R
- - 100 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
BYM36A t
rr
- - 100 ns
BYM36B t
rr
- - 100 ns
BYM36C t
rr
- - 100 ns
BYM36D t
rr
- - 150 ns
BYM36E t
rr
- - 150 ns
Reverse breakdown voltage I
R
= 100 μA
BYM36A V
(BR)R
300 - - V
BYM36B V
(BR)R
500 - - V
BYM36C V
(BR)R
700 - - V
BYM36D V
(BR)R
900 - - V
BYM36E V
(BR)R
1100 - - V
0
100
500
200
300
400
600
0 40 80 120 160 200
T
j
- Junction Temperature (°C)
959705
P
R
- Max. Reverse Power Dissipation (mW)
R
thJA
= 25 K/W
1000 V
800 V
600 V
400 V
200 V
R
thJA
= 70 K/W
959706
I
FAV
- Average Forward Current (A)
0 40 80 120 160 200
T
amb
- Ambient Temperature (°C)
4
3
2
1
0
V
R
= V
RRM
half sinewave
R
thJA
= 70 K/W
R
thJA
= 25 K/W
BYM36A, BYM36B, BYM36C
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 03-Sep-12
3
Document Number: 86012
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Fig. 6 - Max. Forward Current vs. Forward Voltage
Fig. 7 - Diode Capacitance vs. Reverse Voltage
Fig. 5 - Max. Forward Current vs. Forward Voltage
959707
I
FAV
- Average Forward Current (A)
0 40 80 120 160 200
T
amb
- Ambient Temperature (°C)
4
3
2
1
0
V
R
= V
RRM
half sinewave
R
thJA
= 70 K/W
R
thJA
= 25 K/W
BYM36D, BYM36E
0.1
1
10
100
1000
0 40 80 120 160 200
T
j
- Junction Temperature (°C)
959704
I
R
- Reverse Current (μA)
V
R
= V
RRM
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
100
01234
V
F
- Forward Voltage (V)
959709
T
j
= 25 °C
T
j
= 175 °C
BYM36D, BYM36E
0
10
20
30
50
70
40
60
80
90
0.1 1 10 100
V
R
- Reverse Voltage (V)
16302
C
D
- Diode Capacitance (pF)
f = 1 MHz
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
100
01234
V
F
- Forward Voltage (V)
959708
T
j
= 25 °C
T
j
= 175 °C
BYM36A, BYM36B, BYM36C
P1-P3P4-P5

BYM36C-TAP

Mfr. #:
Buy BYM36C-TAP
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600 Volt 3.0 Amp 65 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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