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NLV27WZ08USG

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
April, 2012 − Rev. 10
1 Publication Order Number:
NL27WZ08/D
NL27WZ08
Dual 2-Input AND Gate
The NL27WZ08 is a high performance dual 2−input AND Gate
operating from a 1.65 V to 5.5 V supply.
Features
• Extremely High Speed: t
PD
2.5 ns (typical) at V
CC
= 5 V
• Designed for 1.65 V to 5.5 V V
CC
Operation
• Over Voltage Tolerant Inputs
• LVTTL Compatible − Interface Capability With 5 V TTL Logic with
V
CC
= 3 V
• LVCMOS Compatible
• 24 mA Balanced Output Sink and Source Capability
• Near Zero Static Supply Current Substantially Reduces System
Power Requirements
• Replacement for NC7WZ08
• Chip Complexity: FET = 124
• These Devices are Pb−Free and are RoHS Compliant
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
A1 1
A2
Y2
Figure 1. Pinout
Figure 2. Logic Symbol
&
Y1
A1
B2
B1
V
CC
B1
GND
2
3
8
7
6
45
Y2
Y1
B2
A2
IEEE/IEC
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
US8
US SUFFIX
CASE 493
8
1
http://onsemi.com
1
8
L2 M G
G
L2 = Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation may vary depending upon
manufacturing location.
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Pin
1
2
3
4
5
6
7
8
Function
A1
B1
Y2
GND
A2
B2
Y1
V
CC
Inputs
FUNCTION TABLE
B
L
H
L
H
Output
Y
L
H
A
L
L
H
H
L
L
Y = AB
H = HIGH Logic Level
L = LOW Logic Level
NL27WZ08
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Units
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
I
DC Input Voltage −0.5 to +7.0 V
V
O
DC Output Voltage −0.5 to V
CC
+ 0.5 V
I
IK
DC Input Diode Current
V
I
< GND
−50 mA
I
OK
DC Output Diode Current
V
O
< GND
−50 mA
I
O
DC Output Sink Current ±50 mA
I
CC
DC Supply Current per Supply Pin ±100 mA
I
GND
DC Ground Current per Ground Pin ±100 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature under Bias +150 °C
q
JA
Thermal Resistance (Note 1) 250 °C/W
P
D
Power Dissipation in Still Air at 85°C 250 mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
Latch−Up
Latch−Up Performance
Above V
CC
and Below GND at 85°C (Note 5) ±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Units
V
CC
Supply Voltage
Operating
Data Retention Only
1.65
1.5
5.5
5.5
V
V
I
Input Voltage (Note 6) 0 5.5 V
V
O
Output Voltage (HIGH or LOW State) 0 5.5 V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate
V
CC
= 2.5 V ±0.2 V
V
CC
= 3.0 V ±0.3 V
V
CC
= 5.0 V ±0.5 V
0
0
0
20
10
5
ns/V
6. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level.
NL27WZ08
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Condition
V
CC
(V)
T
A
= 255C −555C 3 T
A
3 1255C
Units
Min Typ Max Min Max
V
IH
High−Level Input Voltage 1.65
2.3 to 5.5
0.75 V
CC
0.7 V
CC
0.75 V
CC
0.7 V
CC
V
V
IL
Low−Level Input Voltage 1.65
2.3 to 5.5
0.25 V
CC
0.3 V
CC
0.25
0.3 V
CC
V
V
OH
High−Level Output
Voltage
V
IN
= V
IL
or V
IH
I
OH
= 100 mA
I
OH
= −3 mA
I
OH
= −8 mA
I
OH
= −12 mA
I
OH
= −16 mA
I
OH
= −24 mA
I
OH
= −32 mA
1.65 to 5.5
165
2.3
2.7
3.0
3.0
4.5
V
CC
− 0.1
1.29
1.9
2.2
2.4
2.3
3.8
V
CC
1.5
2.1
2.4
2.7
2.5
4.0
V
CC
− 0.1
1.5
1.9
2.2
2.4
2.3
3.8
V
V
OL
Low−Level Output Voltage
V
IN
= V
IH
or V
OH
I
OL
= 100 mA
I
OL
= 3 mA
I
OL
= 8 mA
I
OL
= 12 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
1.65 to 5.5
2.3
2.7
3.0
3.0
4.5
0.08
0.20
0.22
0.28
0.38
0.42
0.1
0.24
0.3
0.4
0.4
0.55
0.55
0.1
0.24
0.3
0.4
0.4
0.55
0.55
V
I
IN
Input Leakage Current V
IN
= 5.5 V or
GND
0 to 5.5 ±0.1 ±1.0
mA
I
CC
Quiescent Supply Current V
IN
= 5.5 V or
GND
5.5 1.0 10
mA
I
OFF
Power Off Leakage
Current
V
IN
= 5.5 V or
V
OUT
= 5.5 V
0 1.0 10
mA
AC ELECTRICAL CHARACTERISTICS t
R
= t
F
= 3.0 ns
Symbol
Parameter Condition
V
CC
(V)
T
A
= 255C −555C 3 T
A
3 1255C
Units
Min Typ Max Min Max
t
PLH
t
PHL
Propagation Delay
(Figure 3 and 4)
R
L
= 1 MW, C
L
= 15 pF 1.8 ± 0.15 2.0 5.7 10.5 2.0 11.0
ns
2.5 ± 0.2 1.0 3.5 5.8 2.0 6.2
R
L
= 1 MW, C
L
= 15 pF
R
L
= 500 W, C
L
= 50 pF
3.3 ± 0.3 0.8
1.2
2.6
3.2
3.9
4.8
0.8
1.2
4.3
5.2
R
L
= 1 MW, C
L
= 15 pF
R
L
= 500 W, C
L
= 50 pF
5.0 ± 0.5 0.5
0.8
1.9
2.5
3.1
3.7
0.5
0.8
3.3
4.0
CAPACITIVE CHARACTERISTICS
Symbol Parameter Condition Typical Units
C
IN
Input Capacitance V
CC
= 5.5 V, V
I
= 0 V or V
CC
4 pF
C
PD
Power Dissipation Capacitance
(Note 7)
10 MHz, V
CC
= 3.3 V, V
I
= 0 V or V
CC
10 MHz, V
CC
= 5.5 V, V
I
= 0 V or V
CC
25
30
pF
7. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P5

NLV27WZ08USG

Mfr. #:
Buy NLV27WZ08USG
Manufacturer:
ON Semiconductor
Description:
Logic Gates LOG DUAL INPUT AND
Lifecycle:
New from this manufacturer.
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