VBUS54DD-HS4
www.vishay.com
Vishay Semiconductors
Rev. 1.3. 08-Jun-16
2
Document Number: 83384
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATION NOTE
With the VBUS54DD-HS4 a double, high speed USB-port or up to 4 other high speed signal or data lines can be protected
against transient voltage signals. Negative transients will be clamped close below the ground level while positive transients will
be clamped close above the working range. The high speed data lines, D
1
+, D
2
+, D
1
- and D
2
-, are connected to pin 1, 3, 4, and
5, pin 2 or 6 are connected to ground. As long as the signal voltage on the data lines is between the ground- and the break
down level, the low input capacitance of each channel offers a very high isolation to ground and to the other data lines. But as
soon as any transient signal exceeds this working range, the VBUS54DD-HS4 clamps the transient to ground or to the
avalanche break down voltage level.
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 1 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 2 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
ELECTRICAL CHARACTERISTICS VBUS54DD-HS4 (Pin 1, 3, 4, or 5 to pin 2 or 6)
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
- - 4 lines
Reverse stand-off voltage V
RWM
--5.5V
Reverse current at V
IN
= V
RWM
= 5.5 V I
R
- < 0.01 0.1 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
6.9 8 8.7 V
Reverse clamping voltage at I
PP
= 3 A acc. IEC 61000-4-5 V
C
-1619V
Forward clamping voltage at I
F
= 3 A acc. IEC 61000-4-5 V
F
-3.54.5V
Capacitance
V
IN
= 0 V; any other I/O pin at 3.3 V
C
D
-0.81pF
V
IN
= 2.5 V; any other I/O pin at 3.3 V - 0.5 0.8 pF
20897-1
1
5
4
2
3
6
t
w
i
n
U
S
B
-
P
o
r
t
D
2+
V
BUS
GND
R
E
C
E
I
V
E
R
IC
D
2-
D
1+
D
1-
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 102030405060708090100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
