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FF1N30HS60DD

P1-P3P4-P6
©2003 Fairchild Semiconductor Corporation
May 2003
FF1N30HS60DD
FFH1N30HS60DD RevA
FF1N30HS60DD
30A, 600V Stealth™ Diode
General Description
The FF1N30HS60DD is a Stealth™ diode optimized for low
loss performance in high frequency hard switched applications.
The Stealth™ family exhibits low reverse recovery current
(I
RM(REC)
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
RM(REC)
and short t
a
phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with an SMPS IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49411
.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t
b
/ t
a
> 1.2
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 35ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Fully Isolated Package (2,500 volt AC)
• Extremely Low Switching Losses
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched CCM PFC Boost Diode
• UPS and Motor Drive Free Wheeling Diode
• SMPS FWD
• Snubber Diode
Device Maximum Ratings (per diode) T
C
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
RRM
Repetitive Peak Reverse Voltage 600 V
V
RWM
Working Peak Reverse Voltage 600 V
V
R
DC Blocking Voltage 600 V
I
F(AV)
Average Rectified Forward Current (T
C
= 110
o
C) 30 A
I
FRM
Repetitive Peak Surge Current (20kHz Square Wave) 70 A
I
FSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A
P
D
Power Dissipation 136 W
E
AVL
Avalanche Energy (1A, 40mH) 20 mJ
T
J
, T
STG
Operating and Storage Temperature Range -55 to 175 °C
M
d
Mounting force
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
T
L
T
PKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
JEDEC SOT-227
K
A
Package Symbol
©2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA
FF1N30HS60DD
Package Marking and Ordering Information
Electrical Characteristics
(per diode) T
C
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Tape Width Quantity
FF1N30HS60DD FF1N30HS60DD SOT-227 - 10
Symbol Parameter Test Conditions Min Typ Max Units
I
R
Instantaneous Reverse Current V
R
= 600V T
C
= 25°C - - 100 µA
T
C
= 125°C--1.0mA
V
F
Instantaneous Forward Voltage I
F
= 30A T
C
= 25°C-2.12.4V
T
C
= 125°C-1.72.1V
C
J
Junction Capacitance V
R
= 10V, I
F
= 0A - 120 - pF
t
rr
Reverse Recovery Time I
F
= 1A, dI
F
/dt = 100A/µs, V
R
= 30V - 27 35 ns
I
F
= 30A, dI
F
/dt = 100A/µs, V
R
= 30V - 36 45 ns
t
rr
Reverse Recovery Time I
F
= 30A,
dI
F
/dt = 200A/µs,
V
R
= 390V, T
C
= 25°C
-36 - ns
I
RM(REC)
Maximum Reverse Recovery Current - 2.9 - A
Q
RR
Reverse Recovered Charge - 55 - nC
t
rr
Reverse Recovery Time I
F
= 30A,
dI
F
/dt = 200A/µs,
V
R
= 390V,
T
C
= 125°C
- 110 - ns
S Softness Factor (t
b
/t
a
)-1.9-
I
RM(REC)
Maximum Reverse Recovery Current - 6 - A
Q
RR
Reverse Recovered Charge - 450 - nC
t
rr
Reverse Recovery Time I
F
= 30A,
dI
F
/dt = 1000A/µs,
V
R
= 390V,
T
C
= 125°C
-60 - ns
S Softness Factor (t
b
/t
a
) - 1.25 -
I
RM(REC)
Maximum Reverse Recovery Current - 21 - A
Q
RR
Reverse Recovered Charge 730 - nC
dI
M
/dt Maximum di/dt during t
b
- 800 - A/µs
R
θJC
Thermal Resistance Junction to Case - - 1.1 °C/W
R
θJA
Thermal Resistance Junction to Ambient SOT-227 - - 12 °C/W
©2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA
FF1N30HS60DD
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. t
a
and t
b
Curves vs Forward Current Figure 4. t
a
and t
b
Curves vs dI
F
/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
V
F
, FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
60
50
40
0
0 1.0 2.0 3.0
30
20
10
0.5 1.5 2.5
25
o
C
175
o
C
100
o
C
150
o
C
125
o
C
10
V
R
, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (µA)
100
100 200 500 600400
1000
1
0.1
175
o
C
25
o
C
100
o
C
300
5000
75
o
C
150
o
C
125
o
C
I
F
, FORWARD CURRENT (A)
0
0
20
40
60
80
100
20 60
t, RECOVERY TIMES (ns)
t
b
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
V
R
= 390V, T
J
= 125
o
C
10 30 40 50
t
a
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
90
70
50
30
10
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
0
20
40
60
80
120
t, RECOVERY TIMES (ns)
V
R
= 390V, T
J
= 125
o
C
t
b
AT I
F
= 60A, 30A, 15A
1000 16001400400200 600 800 1200
t
a
AT I
F
= 60A, 30A, 15A
100
I
F
, FORWARD CURRENT (A)
4
8
10
12
14
18
20
I
RM(REC)
, MAX REVERSE RECOVERY CURRENT (A)
dI
F
/dt = 800A/µs
dI
F
/dt = 500A/µs
dI
F
/dt = 200A/µs
V
R
= 390V, T
J
= 125
o
C
020 6010 30 40 50
6
16
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
0
5
10
15
20
25
V
R
= 390V, T
J
= 125
o
C
I
F
= 60A
I
F
= 15A
I
RM(REC)
, MAX REVERSE RECOVERY CURRENT (A)
30
I
F
= 30A
1000 16001400400200 600 800 1200
P1-P3P4-P6

FF1N30HS60DD

Mfr. #:
Buy FF1N30HS60DD
Manufacturer:
ON Semiconductor / Fairchild
Description:
Diodes - General Purpose, Power, Switching 30a 600V Stealth Ultra Fast
Lifecycle:
New from this manufacturer.
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