OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-50SQ100TR

P1-P3P4-P6P7-P7
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com
Vishay Semiconductors
Revision: 19-Sep-11
1
Document Number: 93355
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 5 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Designed and qualified for commercial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-50SQ... axial leaded Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package DO-204AR
I
F(AV)
5 A
V
R
60 V, 80 V, 100 V
V
F
at I
F
0.52 V
I
RM
max. 7.0 mA at 125 °C
T
J
max. 175 °C
Diode variation Single die
E
AS
7.5 mJ
Cathode Anode
DO-204AR
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 5 A
V
RRM
Range 60 to 100 V
I
FSM
t
p
= 5 μs sine 1900 A
V
F
5 Apk, T
J
= 125 °C 0.52 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-50SQ060
VS-50SQ060-M3
VS-50SQ080
VS-50SQ080-M3
VS-50SQ100
VS-50SQ100-M3
UNITS
Maximum DC reverse voltage V
R
60 80 100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 119 °C, rectangular waveform 5
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1900
10 ms sine or 6 ms rect. pulse 290
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.0 A, L = 15 mH 7.5 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by, T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com
Vishay Semiconductors
Revision: 19-Sep-11
2
Document Number: 93355
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
5 A
T
J
= 25 °C
0.66
V
10 A 0.77
5 A
T
J
= 125 °C
0.52
10 A 0.62
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.55
mA
T
J
= 125 °C 7
Maximum junction capacitance C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C 500 pF
Typical series inductance L
S
Measured lead to lead 5 mm from body 10 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to lead
R
thJL
DC operation; see fig. 4
1/8" lead length
8.0
°C/W
Typical thermal resistance,
junction to air
R
thJA
44
Approximate weight
1.4 g
0.049 oz.
Marking device Case style DO-204AR (JEDEC)
50SQ060
50SQ080
50SQ100
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com
Vishay Semiconductors
Revision: 19-Sep-11
3
Document Number: 93355
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJL
Characteristics
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
93355_01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 25 °C
T
J
= 50 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
93355_02
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
93355_03
100
1000
0 20 40 60 80 100
T
J
= 25 °C
= 1/8 inch
Single pulse
(thermal resistance)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
D = 0.01
0.01
0.1
10
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t
1
- Rectangular Pulse Duration (s)
93355_04
Z
thJC
- Thermal Impedance (°C/W)
P1-P3P4-P6P7-P7

VS-50SQ100TR

Mfr. #:
Buy VS-50SQ100TR
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 625-SB5H100-E3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet