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HMC798ALC4TR-R5

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26
HMC798ALC4 Data Sheet
Rev. 0 | Page 4 of 26
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
RF Input Power 13 dBm
LO Input Power
IF Input Power 13 dBm
IF Source or Sink Current 3 mA
V
CC
Supply Voltage 5.5 V
Peak Reflow Temperature 260°C
Maximum Junction Temperature (T
J
) 175°C
Lifetime at Maximum (T
J
)
6
Moisture Sensitivity Level (MSL)
1
MSL3
Continuous Power Dissipation, P
DISS
(T
A
=
85°C, Derate 8.33 mW/°C Above 85°C)
750 mW
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range −65°C to +150°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM) 250 V
Field Induced Charged Device Model
(FICDM)
250 V
1
Based on IPC/JEDEC J-STD-20 MSL classifications.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θ
JA
is the natural convection junction to ambient thermal
resistance measured in a one cubic foot sealed enclosure. θ
JC
is
the junction to case thermal resistance.
Table 3. Thermal Resistance
Package Type θ
JA
θ
JC
Unit
E-24-1
1
120 119 °C/W
1
See JEDEC Standard JESD51-2 for additional information on optimizing the
thermal impedance (PCB with 3 × 3 vias).
ESD CAUTION
Data Sheet HMC798ALC4
Rev. 0 | Page 5 of 26
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
13
1
3
4
2
7
GND
NIC
NIC
GND
5
6
IF
GND
GND
14
GND
15
LO
16
GND
17
NIC
18
GND
GND
8
RF
9
GND
10
NIC
11
VCC
12
19
GND
GN
D
20
NIC
21
NIC
22
NIC
23
NIC
24
GN
D
NOTES
1. NOT INTERNALLY CONNECTED. THESE PINS
CAN BE CONNECTED TO RF AND DC GROUND.
PERFORMANCE IS NOT AFFECTED.
2. EXPOSED PAD. THE EXPOSED PAD MUST BE
CONNECTED TO RF AND DC GROUND.
16785-002
HMC798ALC4
TOP VIEW
(Not to Scale)
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1, 4, 6, 7, 9, 12,
13, 14, 16,
18, 19, 24
GND Ground. These pins and package bottom must be connected to RF and dc ground.
2, 3, 10, 17, 20,
21, 22, 23
NIC Not Internally Connected. These pins can be connected to RF and dc ground. Performance is not affected.
5 IF
Intermediate Frequency Port. This pin is dc-coupled. For applications not requiring operation to dc, dc block
this port externally using a series capacitor of a value chosen to pass the necessary IF frequency range. For
operation to dc, this pin must not source or sink more than 3 mA of current or die malfunction and possible
die failure may result.
8 RF Radio Frequency Port. This pin is dc-coupled and matched to 50 Ω.
11 V
CC
Power Supply for the LO Amplifier.
15 LO Local Oscillator Port. This pin is ac-coupled and matched to 50 Ω.
25 EPAD Exposed Pad. The exposed pad must be connected to RF and dc ground.
INTERFACE SCHEMATICS
G
ND
16785-003
Figure 3. GND Interface Schematic
LO
16785-004
Figure 4. LO Interface Schematic
I
F
16785-005
Figure 5. IF Interface Schematic
RF
16785-006
Figure 6. RF Interface Schematic
HMC798ALC4 Data Sheet
Rev. 0 | Page 6 of 26
TYPICAL PERFORMANCE CHARACTERISTICS
UPCONVERTER PERFORMANCE
IF
IN
= 1 GHz, Upper Sideband
0
–20
–15
–10
–5
23
24
25
27
29
3126
28
30
32 33
34
35
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
16785-007
Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 4 dBm
30
0
5
10
20
15
25
23
24 25 27
29 31
26 28 30
32
33
34 35
INPUT IP3 (dBm)
RF FREQUENCY (GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
16785-008
Figure 8. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQUENCY (GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
16785-009
Figure 9. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 4 dBm
0
–20
–15
–10
–5
23 24 25 27 29 3126 28 30 32 33 34 35
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-010
Figure 10. Conversion Gain vs. RF Frequency at Various LO Power Levels,
T
A
= 25°C
30
0
5
10
20
15
25
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT IP3 (dBm)
RF FREQUENCY (GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-011
Figure 11. Input IP3 vs. RF Frequency at Various LO Power Levels,
T
A
= 25°C
20
0
5
10
15
23 24 25 27 29 3126 28 30 32 33 34 35
INPUT P1dB (dBm)
RF FREQUENCY (GHz)
LO = 6dBm
LO = 4dBm
LO = 2dBm
16785-012
Figure 12. Input P1dB vs. RF Frequency at Various LO Power Levels,
T
A
= 25°C
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HMC798ALC4TR-R5

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Manufacturer:
Analog Devices / Hittite
Description:
RF Mixer Mixers
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