CBT3253A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4 — 31 October 2014 3 of 15
NXP Semiconductors
CBT3253A
Dual 1-of-4 FET multiplexer/demultiplexer
5. Pinning information
5.1 Pinning
5.2 Pin description
Fig 2. Pin configuration SOT109-1 (SO16) and
SOT519-1 (SSOP16)
Fig 3. Pin configuration SOT338-1 (SSOP16) and
SOT403-1 (TSSOP16)
CBT3253A
V
CC
S1 2OE
1B4 S0
1B3 2B4
1B2 2B3
1B1 2B2
1A 2B1
GND 2A
002aab824
1
2
3
4
5
6
7
8
10
9
12
11
14
13
16
15
1OE
S1 2OE
1B4 S0
1B3 2B4
1B2 2B3
1B1 2B2
1A 2B1
2A
1OE
GND
CBT3253A
V
CC
002aab827
1
2
3
4
5
6
7
8
10
9
12
11
14
13
16
15
Table 2. Pin description
Symbol Pin Description
1OE
, 2OE 1, 15 output enable (active LOW)
S1, S0 2, 14 select control input
1B4, 1B3, 1B2, 1B1 3, 4, 5, 6 1B outputs/inputs
1A 7 1A input/output
GND 8 ground (0 V)
2A 9 2A input/output
2B1, 2B2, 2B3, 2B4 10, 11, 12, 13 2B outputs/inputs
V
CC
16 positive supply voltage
CBT3253A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4 — 31 October 2014 4 of 15
NXP Semiconductors
CBT3253A
Dual 1-of-4 FET multiplexer/demultiplexer
6. Functional description
7. Limiting values
[1] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
[2] For SO16 package: P
tot
derates linearly with 8 mW/K above 70 C.
[3] For SSOP16 and TSSOP16 package: P
tot
derates linearly with 5.5 mW/K above 70 C.
8. Recommended operating conditions
Table 3. Function selection
H = HIGH voltage level; L = LOW voltage level; X = Don’t care.
Inputs Switch
1OE 2OE S1 S0
X H X X disconnect 2A to 2Bn
H X X X disconnect 1A to 1Bn
L L L L 1A to 1B1 and 2A to 2B1
L L L H 1A to 1B2 and 2A to 2B2
L L H L 1A to 1B3 and 2A to 2B3
L L H H 1A to 1B4 and 2A to 2B4
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +7.0 V
V
I
input voltage
[1]
0.5 +7.0 V
I
SW
switch current continuous current through each switch - 128 mA
I
IK
input clamping current V
I
<0V 50 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 C to +85 C
SO16 package
[2]
-500mW
SSOP16 package
[3]
-500mW
TSSOP16 package
[3]
-500mW
Table 5. Operating conditions
All unused control inputs of the device must be held at V
CC
or GND to ensure proper device operation.
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 4.5 5.5 V
V
IH
HIGH-level input voltage 2.0 - V
V
IL
LOW-level input voltage - 0.8 V
T
amb
ambient temperature operating in free-air 40 +85 C
CBT3253A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 4 — 31 October 2014 5 of 15
NXP Semiconductors
CBT3253A
Dual 1-of-4 FET multiplexer/demultiplexer
9. Static characteristics
[1] All typical values are measured at V
CC
=5V; T
amb
=25C.
[2] This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
CC
or GND.
[3] Measured by the voltage drop between the A and the B terminals at the indicated current through the switch. The lowest voltage of the
two (A or B) terminals determines the ON resistance.
10. Dynamic characteristics
[1] This parameter is warranted but not production tested. The propagation delay is based on the RC time constant of the typical ON
resistance of the switch and a load capacitance, when driven by an ideal voltage source (zero output impedance).
[2] t
PLH
and t
PHL
are the same as t
pd
.
t
PZL
and t
PZH
are the same as t
en
.
t
PLZ
and t
PHZ
are the same as t
dis
.
Table 6. Static characteristics
T
amb
=
40
Cto+85
C.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
V
IK
input clamping voltage V
CC
=4.5V; I
I
= 18 mA - - 1.2 V
V
pass
pass voltage V
I
=V
CC
= 5.0 V; I
O
= 100 A 3.6 3.9 4.2 V
I
I
input leakage current V
CC
=5.5V; V
I
= GND or 5.5 V - - 1 A
I
CC
supply current V
CC
=5.5V; I
O
=0mA;
V
I
=V
CC
or GND
--3A
I
CC
additional supply current per input; V
CC
= 5.5 V; one input at
3.4 V, other inputs at V
CC
or GND
[2]
--2.5mA
C
I
input capacitance control pins; V
I
=3V or 0V -4.5-pF
C
io(off)
off-state input/output capacitance A port; V
O
= 3 V or 0 V; nOE =V
CC
- 11.4 - pF
B port; V
O
= 3 V or 0 V; nOE =V
CC
-3.8-pF
C
io(on)
on-state input/output capacitance A port and B port - 18.6 - pF
R
ON
ON resistance V
CC
=4.5V
[3]
V
I
=0V; I
I
=64mA - 5 7
V
I
=0V; I
I
=30mA - 5 7
V
I
= 2.4 V; I
I
= 15 mA - 10 15
Table 7. Dynamic characteristics
T
amb
=
40
Cto+85
C; V
CC
= 4.5 V to 5.5 V; for test circuit, see Figure 6.
Symbol Parameter Conditions Min Max Unit
t
pd
propagation delay nA to nBn or nBn to nA; see Figure 4
[1][2]
-0.25ns
Sn to nA; see Figure 4
[1][2]
1.2 6.2 ns
t
en
enable time Sn to nBn; see Figure 5
[2]
1.3 6.3 ns
nOE
to nA or nBn; see Figure 5
[2]
1.4 6.4 ns
t
dis
disable time Sn to nBn; see Figure 5
[2]
1.1 7.2 ns
nOE
to nA or nBn; see Figure 5
[2]
1.0 7 ns

CBT3253APW,118

Mfr. #:
Manufacturer:
Nexperia
Description:
Multiplexer Switch ICs DUAL1OF4 FET
Lifecycle:
New from this manufacturer.
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