IXTH160N10T

© 2006 IXYS CORPORATION All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 μA 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.5 4.5 V
I
GSS
V
GS
= ± 20 V, V
DS
= 0 V ± 200 nA
I
DSS
V
DS
= V
DSS
5 μA
V
GS
= 0 V T
J
= 150°C 250 μA
R
DS(on)
V
GS
= 10 V, I
D
= 25 A, Notes 1, 2 5.8 7.0 mΩ
DS99710 (11/06)
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C 100 V
V
DGR
T
J
= 25°C to 175°C; R
GS
= 1 MΩ 100 V
V
GSM
Transient ± 30 V
I
D25
T
C
= 25°C 160 A
I
LRMS
Lead Current Limit, RMS 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
430 A
I
AR
T
C
= 25°C25A
E
AS
T
C
= 25°C 500 mJ
dv/dt I
S
I
DM
, di/dt 100 A/μs, V
DD
V
DSS
3 V/ns
T
J
175°C, R
G
= 5 Ω
P
D
T
C
= 25°C 430 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
T
SOLD
Plastic body for 10 seconds 260 °C
M
d
Mounting torque 1.13 / 10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-247 6 g
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH160N10T
IXTQ160N10T
V
DSS
= 100 V
I
D25
= 160 A
R
DS(on)
7.0 m
ΩΩ
ΩΩ
Ω
TO-3P (IXTQ)
Preliminary Technical Information
G
D
S
TO-247 (IXTH)
G
S
D
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH160N10T
IXTQ160N10T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 60 A, Note 1 65 102 S
C
iss
6600 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 880 pF
C
rss
135 pF
t
d(on)
Resistive Switching Times 33 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 61 ns
t
d(off)
R
G
= 5 Ω (External) 49 ns
t
f
42 ns
Q
g(on)
132 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 37 nC
Q
gd
40 nC
R
thJC
0.35°C/W
R
thCH
0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0 V 160 A
I
SM
Pulse width limited by T
JM
430 A
V
SD
I
F
= 25 A, V
GS
= 0 V, Note 1 1.0 V
t
rr
I
F
= 25 A, -di/dt = 100 A/μs 100 ns
V
R
= 50 V, V
GS
= 0 V
Notes: 1. Pulse test, t 300 μs, duty cycle d 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
© 2006 IXYS CORPORATION All rights reserved
IXTH160N10T
IXTQ160N10T
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
0 0.2 0.4 0.6 0.8 1 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
25
50
75
100
125
150
175
200
225
250
275
300
012345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
5V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 160A Value
vs. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 160A
I
D
= 80A
Fig. 5. R
DS(on)
Normalized to I
D
= 80A Value
vs. Drain Current
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
0 50 100 150 200 250 300
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V - - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263

IXTH160N10T

Mfr. #:
Manufacturer:
Littelfuse
Description:
MOSFET 160 Amps 100V 6.9 Rds
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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