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ADG749BKSZ-REEL7

P1-P3P4-P6P7-P9P10-P12P13-P13
Data Sheet ADG749
Rev. C | Page 3 of 12
SPECIFICATIONS
V
DD
= 5 V ± 10% and GND = 0 V; T
A
= −40°C to +125°C unless otherwise stated.
Table 1.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA;
5 6 7 Ω max see Figure 13
On Resistance Match Between
Channels (ΔR
ON
) 0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
0.8 0.8 Ω max
On Resistance Flatness (R
FLAT(ON)
) 0.75 Ω typ V
S
= 0 V to V
DD
, I
S
= −10 mA
1.2 1.5 Ω max
LEAKAGE CURRENTS
V
DD
= 5.5 V
Source Off Leakage I
S
(Off) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
±0.25 ±0.35 1 nA max see Figure 14
Channel On Leakage I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= 1 V or V
S
= V
D
= 4.5 V;
±0.25 ±0.35 5 nA max see Figure 15
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
1
t
ON
7 ns typ R
L
= 300 Ω, C
L
= 35 pF
12 ns max V
S
= 3 V; see Figure 16
t
OFF
3 ns typ R
L
= 300 Ω, C
L
= 35 pF
6 ns max V
S
= 3 V; see Figure 16
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF,
1
ns min
V
S1
= V
S2
= 3 V; see Figure 17
Off Isolation −67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−87 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 18
Channel-to-Channel Crosstalk −62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 19
Bandwidth −3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 20
C
S
(Off) 7 pF typ
C
D
, C
S
(On) 27 pF typ
POWER REQUIREMENTS V
DD
= 5.5 V
Digital inputs = 0 V or 5.5 V
I
DD
0.001 μA typ
1.0 μA max
1
Guaranteed by design, not subject to production test.
ADG749 Data Sheet
Rev. C | Page 4 of 12
V
DD
= 3 V ± 10% and GND = 0 V; T
A
= −40°C to +125°C unless otherwise stated
Table 2.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 6 7 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA;
10
12
Ω max
see Figure 13
On Resistance Match Between
Channels (ΔR
ON
) 0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA
0.8 0.8 Ω max
On Resistance Flatness (R
FLAT(ON)
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
S
= –10 mA
LEAKAGE CURRENTS V
DD
= 3.3 V
Source Off Leakage IS (Off) ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
±0.25 ±0.35 1 nA max see Figure 14
Channel On Leakage I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= 1 V or V
S
= V
D
= 3 V;
±0.25 ±0.35 5 nA max see Figure 15
DIGITAL INPUTS
Input High Voltage, V
INH
2.0
V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
DYNAMIC CHARACTERISTICS
1
t
ON
10 ns typ R
L
= 300 Ω, C
L
= 35 pF
15 ns max V
S
= 2 V; see Figure 16
t
OFF
4 ns typ R
L
= 300 Ω, C
L
= 35 pF
8 ns max V
S
= 2 V; see Figure 16
Break-Before-Make Time Delay,
t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 ns min V
S1
= V
S2
= 2 V; see Figure 17
Off Isolation –67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–87
dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 18
Channel-to-Channel Crosstalk –62 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–82 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 19
Bandwidth −3 dB 200 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 20
C
S
(Off) 7 pF typ
C
D
, C
S
(On) 27 pF typ
POWER REQUIREMENTS V
DD
= 3.3 V
Digital inputs = 0 V or 3.3 V
I
DD
0.001 μA typ
1.0 μA max
1
Guaranteed by design, not subject to production test.
Data Sheet ADG749
Rev. C | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C unless otherwise noted.
Table 3.
Parameter Ratings
V
DD
to GND −0.3 V to +7 V
Analog, Digital Input
1
−0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
Peak Current, S or D
100 mA (pulsed at 1 ms, 10%
duty cycle max)
Continuous Current, S or D 30 mA
Industrial (B Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
SC70 Package, Power
Dissipation
315 mW
JA
332°C/W
θ
JC
Thermal Impedance 120°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
Pb-free Reflow Soldering
Peak Temperature 260(+0/–5)°C
Time at Peak Temperature 10 sec to 40 sec
1
Overvoltage at IN, S or D will be clamped by internal diodes. Current should
be limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating can be applied at any
one time.
ESD CAUTION
P1-P3P4-P6P7-P9P10-P12P13-P13

ADG749BKSZ-REEL7

Mfr. #:
Buy ADG749BKSZ-REEL7
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 2.5 Ohm 5.5V CMOS 2:1 Mux/SPDT
Lifecycle:
New from this manufacturer.
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