V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-16
1
Document Number: 89117
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.62 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA
package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 10 A
V
RRM
200 V
I
FSM
110 A
V
F
at I
F
= 10 A 0.71 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations Common cathode
TO-220AB
1
2
3
1
K
2
3
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
CASE
PIN 3
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
PIN 3
K
V20200G VF20200G
VI20200GVB20200G
TMBS
®
ITO-220AB
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20200G VF20200G VB20200G VI20200G UNIT
Max. repetitive peak reverse voltage V
RRM
200 V
Max. average forward rectified current (fig. 1)
per device
I
F(AV)
20
A
per diode 10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
110 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH
per diode
E
AS
60 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
I
RRM
0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
