7WBD383BMX1TCG

© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 2
1 Publication Order Number:
7WBD383/D
7WBD383
Translating Bus Exchange
Switch
The 7WBD383 is an advanced high−speed low−power translating
bus exchange switch in ultra−small footprints.
Features
High Speed: t
PD
= 0.25 ns (Max) @ V
CC
= 4.5 V
3 W Switch Connection Between 2 Ports
Power Down Protection Provided on Inputs
Zero Bounce
TTL−Compatible Control Inputs
Ultra−Small Pb−Free Packages
These are Pb−Free Devices
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
UDFN8
MU SUFFIX
CASE 517AJ
1
8
ALM
G
1
8
AJ M*G
G
1
UQFN8
MU SUFFIX
CASE 523AN
US8
US SUFFIX
CASE 493
1
8
AG M*G
G
(Note: Microdot may be in either location)
A = Assembly Location
Y = Year
W = Work Week
M = Date Code
G = Pb−Free Package
*Date Code orientation may vary depending
upon manufacturing location.
UDFN8
1.95 x 1.0
CASE 517CA
X M
1
D383
AYWG
G
1
8
Micro8]
DM SUFFIX
CASE 846A
7WBD383
http://onsemi.com
2
OE 1V
CC
A
GND
2
3
8
7
6
45
B
C
D
EX
Figure 1. UDFN8
(Top Thru−View)
Figure 2. UQFN8
(Top Thru−View)
123
4
765
8
C
DEX
AB
V
CC
GND
Figure 3. US8/Micro8
(Top View)
OE
A
GND
B
V
CC
C
D
EX
Figure 4. Logic Diagram
A
B
EX
OE
C
D
OE
1
2
3
4
8
7
6
5
FUNCTION TABLE
Input OE Input EX Function
L L A = C; B = D
L H A = D; B = C
H X Disconnect
7WBD383
http://onsemi.com
3
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
Control Pin Input Voltage −0.5 to +7.0 V
V
I/O
Switch Input / Output Voltage −0.5 to +7.0 V
I
IK
Control Pin DC Input Diode Current V
IN
< GND −50 mA
I
OK
Switch I/O Port DC Diode Current V
I/O
< GND −50 mA
I
O
ON−State Switch Current $128 mA
Continuous Current Through V
CC
or GND $150 mA
I
CC
DC Supply Current Per Supply Pin $150 mA
I
GND
DC Ground Current per Ground Pin $150 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
q
JA
Thermal Resistance US8 (Note 1)
UDFN8
UQFN8
Micro8
251
111
208
392
°C/W
P
D
Power Dissipation in Still Air at 85°C US8
UDFN8
UQFN8
Micro8
498
1127
601
319
mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Mode (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125 °C (Note 5) $200 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 4.0 5.5 V
V
IN
Control Pin Input Voltage 0 5.5 V
V
I/O
Switch Input / Output Voltage 0 5.5 V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate Control Input
Switch I/O
0
0
5
DC
nS/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

7WBD383BMX1TCG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Translation - Voltage Levels 2Bit Translating Bus SW 1 Circuit 274mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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