NLU1GT04AMUTCG

© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 3
1 Publication Order Number:
NLU1GT04/D
NLU1GT04
Single Inverter, TTL Level
LSTTL−Compatible Inputs
The NLU1GT04 MiniGatet is an advanced CMOS high−speed
inverting buffer in ultra−small footprint.
The device input is compatible with TTL−type input thresholds and
the output has a full 5.0 V CMOS level output swing.
The NLU1GT04 input and output structures provide protection
when voltages up to 7 V are applied, regardless of the supply voltage.
Features
High Speed: t
PD
= 3.8 ns (Typ) @ V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
TTL−Compatible Input: V
IL
= 0.8 V; V
IH
= 2.0 V
CMOS−Compatible Output:
V
OH
> 0.8 V
CC
; V
OL
< 0.1 V
CC
@ Load
Power Down Protection Provided on inputs
Balanced Propagation Delays
Ultra−Small Packages
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
CC
NC
IN A
OUT Y
GND
1
2
3
5
4
IN A
OUT Y
1
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
6
NC
MARKING
DIAGRAMS
N or P = Device Marking
M = Date Code
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
UDFN6
MU SUFFIX
CASE 517AA
PIN ASSIGNMENT
1
2
3 GND
NC
IN A
4
5NC
OUT Y
FUNCTION TABLE
L
H
AY
H
L
6V
CC
N
M
PM
UDFN6
MU SUFFIX
CASE 517AQ
1
NLU1GT04
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current V
IN
< GND −20 mA
I
OK
DC Output Diode Current V
OUT
< GND ±20 mA
I
O
DC Output Source/Sink Current ±12.5 mA
I
CC
DC Supply Current Per Supply Pin ±25 mA
I
GND
DC Ground Current per Ground Pin ±25 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125 °C (Note 5) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0 5.5 V
V
OUT
Output Voltage 0 5.5 V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NLU1GT04
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
V
CC
(V)
T
A
= 25 5C T
A
= +855C
T
A
= −555C
to +1255C
Unit
Min Typ Max Min Max Min Max
V
IH
Low−Level Input Voltage
1.8 1.2 1.2 1.2
V
3.0 1.4 1.4 1.4
4.5 to
5.5
2.0 2.0 2.0
V
IL
Low−Level Input Voltage
1.8 0.3 0.3 0.3
V
3.0 0.53 0.53 0.53
4.5 to
5.5
0.8 0.8 0.8
V
OH
High−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OH
= −50 mA
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= −2 mA
I
OH
= −4 mA
I
OH
= −8 mA
1.8
3.0
4.5
1.40
2.58
3.94
1.38
2.48
3.80
1.37
2.34
3.66
V
OL
Low−Level Output
Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
3.0
4.5
0
0
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 2 mA
I
OL
= 4 mA
I
OL
= 8 mA
1.8
3.0
4.5
0.36
0.36
0.36
0.44
0.44
0.44
0.52
0.52
0.52
I
IN
Input Leakage Current 0 v V
IN
v 5.5 V 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
CC
Quiescent Supply
Current
0 v V
IN
v V
CC
5.5 1.0 20 40
mA
I
CCT
Quiescent Supply
Current
V
IN
= 3.4 V 5.5 1.35 1.50 1.65 mA
I
OPD
Output Leakage Current V
OUT
= 5.5 V 0.0 0.5 5.0 10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol
Parameter
V
CC
(V)
Test
Condition
T
A
= 25 5C T
A
= +855C
T
A
= −555C to
+1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation De-
lay, Input A to
Output Y
3.0 to
3.6
C
L
= 15 pF 5.0 10.0 11.0 13.0
ns
C
L
= 50 pF 6.2 13.5 15.0 17.5
4.5 to
5.5
C
L
= 15 pF 3.8 6.7 7.5 8.5
C
L
= 50 pF 4.2 7.7 8.5 9.5
C
IN
Input Capacitance 5 10 10 10.0 pF
C
PD
Power Dissipation
Capacitance
(Note 6)
5.0 10 pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC.

NLU1GT04AMUTCG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Inverters SINGLE INVERTER
Lifecycle:
New from this manufacturer.
Delivery:
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