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MC74VHCT541AMELG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 6
1 Publication Order Number:
MC74VHCT541A/D
MC74VHCT541A
Octal Bus Buffer
The MC74VHCT541A is an advanced high speed CMOS octal bus
buffer fabricated with silicon gate CMOS technology. It achieves high
speed operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The MC74VHCT541A is a noninverting, 3−state, buffer/line
driver/line receiver. When either OE1
or OE2 is high, the terminal
outputs are in the high impedance state.
The VHCT inputs are compatible with TTL levels. This device can
be used as a level converter for interfacing 3.3 V to 5.0 V, because it
has full 5.0 V CMOS level output swings.
The VHCT541A input and output (when disabled) structures
provide protection when voltages between 0 V and 5.5 V are applied,
regardless of the supply voltage. These input and output structures
help prevent device destruction caused by supply
voltage−input/output voltage mismatch, battery backup, hot insertion,
etc.
Features
• High Speed: t
PD
= 5.4 ns (Typ) at V
CC
= 5.0 V
• Low Power Dissipation: I
CC
= 4 mA (Max) at T
A
= 25°C
• TTL−Compatible Inputs: V
IL
= 0.8 V; V
IH
= 2.0 V
• Power Down Protection Provided on Inputs and Outputs
• Balanced Propagation Delays
• Designed for 4.5 V to 5.5 V Operating Range
• Low Noise: V
OLP
= 1.6 V (Max)
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300 mA
• ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
• Chip Complexity: 134 FETs or 33.5 Equivalent Gates
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SOEIAJ−20
SUFFIX M
CASE 967
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
74VHCT541
AWLYWWG
20
1
20
1
1
TSSOP−20
SUFFIX DT
CASE 948E
SOIC−20WB
SUFFIX DW
CASE 751D
VHCT
541A
ALYWG
G
1
1
20
1
VHCT541A
AWLYYWWG
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
L
L
H
X
L
L
X
H
L
H
X
X
FUNCTION TABLE
Inputs
Output Y
OE1 OE2 A
L
H
Z
Z
MC74VHCT541A
http://onsemi.com
2
18
Y1
2
A1
17
Y2
3
A2
16
Y3
4
A3
15
Y4
5
A4
14
Y5
6
A5
13
Y6
7
A6
12
Y7
8
A7
11
Y8
9
A8
OE1
OE2
1
19
OUTPUT
ENABLES
DATA
INPUTS
NONINVERTING
OUTPUTS
Figure 1. Logic Diagram
Figure 2. Pin Assignment
A5
A3
A2
A1
OE1
GND
A8
A7
A6
A4 5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
11
12
13
Y3
Y2
Y1
OE2
V
CC
Y8
Y7
Y6
Y5
Y4
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage – 0.5 to + 7.0 V
V
in
DC Input Voltage – 0.5 to + 7.0 V
V
out
DC Output Voltage Outputs in 3−State
High or Low State
– 0.5 to + 7.0
– 0.5 to V
CC
+ 0.5
V
I
IK
Input Diode Current − 20 mA
I
OK
Output Diode Current (V
OUT
< GND; V
OUT
> V
CC
) ± 20 mA
I
out
DC Output Current, per Pin ± 25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ± 75 mA
P
D
Power Dissipation in Still Air, SOIC Package†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature – 65 to + 150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating − SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 4.5 5.5 V
V
in
DC Input Voltage 0 5.5 V
V
out
DC Output Voltage Outputs in 3−State
High or Low State
0
0
5.5
V
CC
V
T
A
Operating Temperature − 40 + 85
_C
t
r
, t
f
Input Rise and Fall Time V
CC
=5.0V ±0.5V 0 20 ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
MC74VHCT541A
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbo
l
Parameter Test Conditions
V
CC
V
T
A
= 25°C T
A
= − 40 to 85°C
Uni
t
Min Typ Max Min Max
V
IH
Minimum High−Level Input Voltage 4.5 to 5.5 2.0 2.0 V
V
IL
Maximum Low−Level Input Voltage 4.5 to 5.5 0.8 0.8 V
V
OH
Minimum High−Level Output
Voltage V
in
= V
IH
or V
IL
I
OH
= − 50mA
4.5 4.4 4.5 4.4 V
I
OH
= − 8mA 4.5 3.94 3.80
V
OL
Maximum Low−Level Output
Voltage V
in
= V
IH
or V
IL
I
OL
= 50mA
4.5 0.0 0.1 0.1 V
I
OL
= 8mA 4.5 0.36 0.44
I
in
Maximum Input Leakage Current V
in
= 5.5 V or GND 0 to 5.5 ± 0.1 ± 1.0
mA
I
OZ
Maximum 3−State Leakage Current V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
5.5 ± 0.25 ± 2.5
mA
I
CC
Maximum Quiescent Supply Current V
in
= V
CC
or GND 5.5 4.0 40.0
mA
I
CCT
Quiescent Supply Current Per Input: V
IN
= 3.4V
Other Input: V
CC
or GND
5.5 1.35 1.50 mA
I
OPD
Output Leakage Current V
OUT
= 5.5V 0 0.5 5.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0ns)
Symbo
l
Parameter Test Conditions
T
A
= 25°C T
A
= − 40 to 85°C
Uni
t
Min Typ Max Min Max
t
PLH
,
t
PHL
Maximum Propagation Delay,
A to Y
V
CC
= 5.0 ± 0.5V C
L
= 15pF
C
L
= 50pF
5.0
5.5
6.9
7.9
1.0
1.0
8.0
9.0
ns
t
PZL
,
t
PZH
Output Enable TIme,
OE to Y
V
CC
= 5.0 ± 0.5V C
L
= 15pF
R
L
= 1kW C
L
= 50pF
8.3
8.8
11.3
12.3
1.0
1.0
13.0
14.0
ns
t
PLZ
,
t
PHZ
Output Disable Time,
OE
to Y
V
CC
= 5.0 ± 0.5V C
L
= 50pF
R
L
= 1kW
9.4 11.9 1.0 13.5 ns
t
OSLH
,
t
OSHL
Output to Output Skew V
CC
= 5.0 ± 0.5V C
L
= 50pF
(Note 1)
1.0 1.0 ns
C
in
Maximum Input Capacitance 4 10 10 pF
C
out
Maximum 3−State Output Capacitance
(Output in High Impedance State)
9 pF
C
PD
Power Dissipation Capacitance (Note 2)
Typical @ 25°C, V
CC
= 5.0V
pF
19
1. Parameter guaranteed by design. t
OSLH
= |t
PLHm
− t
PLHn
|, t
OSHL
= |t
PHLm
− t
PHLn
|.
2. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
/8 (per bit). C
PD
is used to determine the no−load
dynamic power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
NOISE CHARACTERISTICS (Input t
r
= t
f
= 3.0ns, C
L
= 50pF, V
CC
= 5.0V)
Symbo
l
Parameter
T
A
= 25°C
Uni
t
Typ Max
V
OLP
Quiet Output Maximum Dynamic V
OL
1.2 1.6 V
V
OLV
Quiet Output Minimum Dynamic V
OL
−1.2 −1.6 V
V
IHD
Minimum High Level Dynamic Input Voltage 2.0 V
V
ILD
Maximum Low Level Dynamic Input Voltage 0.8 V
P1-P3P4-P6P7-P7

MC74VHCT541AMELG

Mfr. #:
Buy MC74VHCT541AMELG
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers 5V Octal 3-State Non-Inverting TTL
Lifecycle:
New from this manufacturer.
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