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NRVTSA4100T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 2
1 Publication Order Number:
NTSA4100/D
NTSA4100, NRVTSA4100
Low Forward Voltage, Low
Leakage Trench-based
Schottky Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• High Surge Capability
• NRVTSA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
• LED Lighting
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
Device Package Shipping†
ORDERING INFORMATION
NTSA4100T3G SMA
(Pb−Free)
5000 /
Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
4 AMPERES
100 VOLTS
www.onsemi.com
SMA
CASE 403D
STYLE 1
MARKING
DIAGRAMS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
TH41
AYWWG
TH41 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
NRVTSA4100T3G SMA
(Pb−Free)
5000 /
Tape & Reel
NTSA4100, NRVTSA4100
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
(T
L
= 118°C)
I
F(AV)
4.0 A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, T
L
= 110°C)
I
FRM
8.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
50 A
Storage Temperature Range T
stg
−65 to +150 °C
Operating Junction Temperature T
J
−55 to +150 °C
ESD Rating (Human Body Model) 1B
ESD Rating (Machine Model) M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JL
− 16.2 °C/W
Thermal Resistance, Junction−to−Ambient, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JA
− 90 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 1.0 A, T
J
= 25°C)
(i
F
= 4.0 A, T
J
= 25°C)
(i
F
= 1.0 A, T
J
= 125°C)
(i
F
= 4.0 A, T
J
= 125°C)
v
F
0.43
0.59
0.35
0.53
−
0.66
−
0.58
V
Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
i
R
1.3
0.13
25
9
mA
mA
Diode Capacitance
(Rated dc Voltage, T
J
= 25°C, f = 1 MHz)
C
d
54.7
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
NTSA4100, NRVTSA4100
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.00.80.60.40.20
0.1
1
10
100
0.80.60.20
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
9070605040302010 100807050302010
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
0.1
10
100
1000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
80 100
1.E−06
1.E−05
1.E−04
1.E−03
1.E−01
40 60
1.E−04
1.E−03
1.E−02
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
10 100
T
A
= 85°C
T
A
= −55°C
T
A
= 25°C
T
A
= 85°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 125°C
T
A
= 25°C
Figure 6. Current Derating
T
C
, LEAD TEMPERATURE (°C)
8060 120200
0
1
2
4
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
6
40 100
Square Wave
DC
R
q
JL
= 16.2°C/W
T
J
= 25°C
0.4
90
T
A
= 125°C
T
A
= 150°C
T
A
= 85°C
1
1.0
T
A
= 125°C
T
A
= 25°C
T
A
= 150°C
T
A
= 85°C
1.E−05
3
5
T
A
= 150°C
T
A
= 150°C
1.2
1.E−07
1.E−02
1.E−01
1.E−06
140
7
8
P1-P3P4-P5

NRVTSA4100T3G

Mfr. #:
Buy NRVTSA4100T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers AUTO STANDARD OF NTS
Lifecycle:
New from this manufacturer.
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