Jantx2N6287

1
Revision Date: 8/19/2012
PNP Darlington Power Silicon Transistor
2N6286 & 2N6287
Maximum Ratings
Features
Available in JANTX, and JANTXV
per MIL-PRF-19500/505
TO-3 (TO-204AA) Package
Ratings Symbol 2N6286 2N6287 Units
Collector - Emitter Voltage V
CEO
-80 -100 Vdc
Collector - Base Voltage V
CBO
-80 -100 Vdc
Emitter - Base Voltage V
EBO
-7.0 Vdc
Base Current I
B
-0.5 Adc
Collector Current I
C
-20 Adc
Total Power Dissipation @ T
A
= +25 °C
(1)
P
T
175 W
@ T
C
= +100 °C 87.5 W
Operating & Storage Junction Temperature Range T
op
, T
stg
-65 to +175 °C
Electrical Characteristics
1) Derate linearly @ 1.17 mW / °C for T
C
> +25 °C
OFF Characteristics Symbol Mimimum Maximum Units
Collector - Emitter Breakdown Voltage
I
C
= -100 mAdc 2N6286 V
(BR)CEO
-80 - - - Vdc
2N6287 -100
Collector - Emitter Cutoff Current
V
CE
= -40 Vdc 2N6286 I
CEO
- - - -1.0 mAdc
V
CE
= -50 Vdc 2N6287 -1.0
Collector - Emitter Cutoff Current
V
CE
= -80 Vdc, V
BE
= 1.5 Vdc 2N6286 I
CEX
- - - -0.5 mAdc
V
CE
= -100 Vdc, V
BE
= 1.5 Vdc 2N6287 -0.5
Emitter - Base Cutoff Current
V
EB
= -7.0 Vdc I
EBO
- - - -2.0 mAdc
Thermal Characteristics
Characteristics Symbol Maximum Units
Thermal Resistance, Junction-to-Case R
θJC
0.857 °C/W
Revision Date: 8/19/2012
603-641-3800 • 888-641--SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
2
Electrical Characteristics -con’t
ON Characteristics
(2)
Symbol Mimimum Maximum Units
Forward Current Transfer Ratio H
FE
I
C
= -1.0 Adc, V
CE
= -3.0 Vdc 1,000
I
C
= -6.0 Adc, V
CE
= -3.0 Vdc 1,000 18,000
I
C
= -12 Adc, V
CE
= -3.0 Vdc 150
Collector - Emitter Saturation Voltage V
CE(sat)
I
C
= -20 Adc, I
B
= -200 mAdc - - - -3.0 Vdc
I
C
= -10.0 Adc, I
B
= -40 mAdc - - - -2.0
Base - Emitter Saturation Voltage V
BE(sat)
I
C
= -20 Adc, I
B
= -200 mAdc - - - -4.0 Vdc
Base - Emitter Voltage V
BE(sat)
I
C
= -10.0 Adc, I
B
= -3.0 Adc - - - -2.8 Vdc
DYNAMIC Characteristics
Magnitude of Common Emitter Small-Signal Short-Circuit | h
fe
| 8.0 80
Forward Current Transfer Ratio
I
C
= -10 Adc, V
CE
= -3.0 Vdc, f = 1.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio h
fe
300 - - -
I
C
= -10 Adc, V
CE
= -3.0 Vdc
Output Capacitance C
obo
- - - 400 pF
V
CB
= -10 Vdc, I
E
= 0, 100 kHz < f < 1.0 MHz
Switching Characteristic
Turn-On Time
V
CC
= -30 Vdc, I
C
= -10 Adc, I
B
= -40 mAdc t
on
- - - 2.0 μs
Tum-Off Time
V
CC
= -30 Vdc, I
C
= -10 Adc, I
B
= -40 mAdc t
off
- - - 10 μs
SAFE OPERATING AREA
DC Tests: T
C
= +25 °C, I Cycle, t = 1.0 s
Test 1: V
CE
= -8.75 Vdc, I
C
= -20 Adc All Types
Test 2: V
CE
= -30.0 Vdc, I
C
= -5.8 Adc All Types
Test 3: V
CE
= -80.0 Vdc, I
C
= -100 mAdc 2N6286
V
CE
= -100.0 Vdc, I
C
= -100 mAdc 2N6287
(2) Pulse Test: Pulse Width = 300 μs, Duty Cycle < 2.0 %.
2N6286 & 2N6287
Revision Date: 8/19/2012
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2N6051 & 2N6051
Outline Drawing

Jantx2N6287

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Darlington Transistors Power BJT
Lifecycle:
New from this manufacturer.
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