IXTN90P20P Datasheet IXTN90P20P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C - 200 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M - 200 V

V

GSS

Continuous 20 V

V

GSM

Transient 30 V

I

D25

T

C

= 25C - 90 A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

- 270 A

I

A

T

C

= 25C - 90 A

E

AS

T

C

= 25C 3.5 J

dv/dt I

S

 I

DM

, V

DD

 V

DSS

, T

J

 150C 10 V/ns

P

D

T

C

= 25C 890 W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

V

ISOL

50/60 Hz, RMS t = 1 minute 2500 V~

I

ISOL

 1mA t = 1 second 3000 V~

M

d

Mounting Torque 1.5/13 Nm/lb.in

Terminal Connection Torque 1.3/11.5 Nm/lb.in

Weight 30 g

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= - 250A - 200 V

V

GS(th)

V

DS

= V

GS

, I

D

= -1mA - 2.0 - 4.5 V

I

GSS

V

GS

= 20V, V

DS

= 0V 100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V - 50 A

T

J

= 125C - 250 A

R

DS(on)

V

GS

= -10V, I

D

= 0.5 • I

D25

, Note 1 44 m

PolarP

TM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTN90P20P

V

DSS

= - 200V

I

D25

= - 90A

R

DS(on)



 44m





DS99934D(6/16)

Features



International Standard Package



miniBLOC, with Aluminium Nitride

Isolation



Rugged PolarP

TM

Process



Avalanche Rated



Low Package Inductance

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



High-Side Switches



Push Pull Amplifiers



DC Choppers



Automatic Test Equipment



Current Regulators

S

D

G

miniBLOC

E153432

G

D

S

G = Gate D = Drain

S = Source

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

IXTN90P20P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= -10V, I

D

= 0.5 • I

D25

, Note 1 30 51 S

C

iss

12 nF

C

oss

V

GS

= 0V, V

DS

= - 25V, f = 1MHz 2210 pF

C

rss

250 pF

t

d(on)

32 ns

t

r

60 ns

t

d(off)

89 ns

t

f

28 ns

Q

g(on)

205 nC

Q

gs

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

45 nC

Q

gd

80 nC

R

thJC

0.14C/W

R

thCS

0.05 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V - 90 A

I

SM

Repetitive, Pulse Width Limited by T

JM

- 360 A

V

SD

I

F

= - 45A, V

GS

= 0V, Note 1 - 3.2 V

t

rr

315 ns

Q

RM

6.6 C

I

RM

- 42 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t  300s, duty cycle, d  2%.

Resistive Switching Times

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0 .5 • I

D25

R

G

= 1 (External)

I

F

= - 45A, -di/dt = -150A/s

V

R

= -100V, V

GS

= 0V

SOT-227B (IXTN) Outline

(M4 screws (4x) supplied)

IXTN90P20P

Fig. 1. Output Characteristics @ T

J

= 25ºC

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 5

V

- 6

V

- 7

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

-240

-200

-160

-120

-80

-40

0

-30-25-20-15-10-50

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8

V

- 6

V

- 7

V

- 5

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

-8-7-6-5-4-3-2-10

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 6

V

- 5

V

- 7

V

Fig. 4. R

DS(on)

Normalized to I

D

= - 45A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= - 90

A

I

D

= - 45

A

Fig. 5. R

DS(on)

Normalized to I

D

= - 45A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-240-210-180-150-120-90-60-300

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXTN90P20P

IXTN90P20P

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