BGD704 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 28 September 2010 4 of 10
NXP Semiconductors
BGD704
750 MHz, 20 dB gain power doubler amplifier
[1] f
p
= 55.25 MHz; V
p
=44dBmV; f
q
= 541.25 MHz; V
q
= 44 dBmV; measured at f
p
+f
q
=596.5MHz.
[2] Measured according to DIN45004B; f
p
= 590.25 MHz; V
p
=V
o
; f
q
= 597.25 MHz; V
q
=V
o
6dB; f
r
= 599.25 MHz; V
r
=V
o
6dB;
measured at f
p
+f
q
f
r
= 588.25 MHz.
[3] The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
[1] f
p
= 55.25 MHz; V
p
=44dBmV; f
q
= 493.25 MHz; V
q
= 44 dBmV; measured at f
p
+f
q
=548.5MHz.
CTB composite triple beat 85 channels flat; V
o
= 44 dBmV; measured at
595.25 MHz
- 65 64 dB
X
mod
cross modulation 85 channels flat; V
o
= 44 dBmV; measured at
55.25 MHz
- 65 64 dB
CSO composite second order
distortion
85 channels flat; V
o
= 44 dBmV; measured at
596.5 MHz
- 66 58 dB
d
2
second order distortion
[1]
--68 dB
V
o
output voltage d
im
= 60 dB
[2]
63 - - dBmV
F noise figure see Table 5
---dBmV
I
tot
total current consumption (DC)
[3]
-425435mA
Table 6. Characteristics
…continued
Bandwidth 40 MHz to 600 MHz; V
B
=24V; T
mb
=35
°
C; Z
S
=Z
L
=75
Ω
.
Symbol Parameter Conditions Min Typ Max Unit
Table 7. Characteristics
Bandwidth 40 MHz to 550 MHz; V
B
=24V; T
mb
=35
°
C; Z
S
=Z
L
=75
Ω
.
Symbol Parameter Conditions Min Typ Max Unit
G
p
power gain f = 50 MHz 19.5 20 20.5 dB
f = 550 MHz 20 20.6 - dB
SL slope cable equivalent f = 40 MHz to 550 MHz 0 - 2 dB
FL flatness of frequency response f = 40 MHz to 550 MHz - - ±0.3 dB
s
11
input return losses f = 40 MHz to 80 MHz 20 31 - dB
f = 80 MHz to 160 MHz 19 29 - dB
f = 160 MHz to 320 MHz 18 25 - dB
f = 320 MHz to 550 MHz 17 21 - dB
s
22
output return losses f = 40 MHz to 80 MHz 20 26 - dB
f = 80 MHz to 160 MHz 19 27 - dB
f = 160 MHz to 320 MHz 18 26 - dB
f = 320 MHz to 550 MHz 17 24 - dB
s
21
phase response f = 50 MHz 45 - +45 deg
CTB composite triple beat 77 channels flat; V
o
= 44 dBmV; measured at
547.25 MHz
- 67 66 dB
X
mod
cross modulation 77 channels flat; V
o
= 44 dBmV; measured at
55.25 MHz
- 67 66 dB
CSO composite second order
distortion
77 channels flat; V
o
= 44 dBmV; measured at
548.5 MHz
- 67 60 dB
d
2
second order distortion
[1]
--70 dB
V
o
output voltage d
im
= 60 dB
[2]
63.5 - - dBmV
F noise figure see Table 5
---dB
I
tot
total current consumption (DC)
[3]
-425435mA
BGD704 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 28 September 2010 5 of 10
NXP Semiconductors
BGD704
750 MHz, 20 dB gain power doubler amplifier
[2] Measure according to DIN45004B; f
p
= 540.25 MHz; V
p
=V
o
; f
q
= 547.25 MHz; V
q
=V
o
6dB; f
r
= 549.25 MHz; V
r
=V
o
6dB;
measured at f
p
+f
q
f
r
= 538.25 MHz.
[3] The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
[1] f
p
= 55.25 MHz; V
p
=44dBmV; f
q
= 391.25 MHz; V
q
= 46 dBmV; measured at f
p
+f
q
=446.5MHz.
[2] Measured according to DIN45004B; f
p
= 440.25 MHz; V
p
=V
o
; f
q
= 447.25 MHz; V
q
=V
o
6dB; f
r
= 449.25 MHz; V
r
=V
o
6dB;
measured at f
p
+f
q
f
r
= 438.25 MHz.
[3] The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
Table 8. Characteristics
Bandwidth 40 MHz to 450 MHz; V
B
=24V; T
mb
=35
°
C; Z
S
=Z
L
=75
Ω
.
Symbol Parameter Conditions Min Typ Max Unit
G
p
power gain f = 50 MHz 19.5 20 20.5 dB
f = 450 MHz 20 20.6 - dB
SL slope cable equivalent f = 40 MHz to 450 MHz 0 - 2 dB
FL flatness of frequency response f = 40 MHz to 450 MHz - - ±0.3 dB
s
11
input return losses f = 40 MHz to 80 MHz 20 31 - dB
f = 80 MHz to 160 MHz 19 29 - dB
f = 160 MHz to 320 MHz 18 25 - dB
f = 320 MHz to 450 MHz 17 21 - dB
s
22
output return losses f = 40 MHz to 80 MHz 20 26 - dB
f = 80 MHz to 160 MHz 19 27 - dB
f = 160 MHz to 320 MHz 18 26 - dB
f = 320 MHz to 450 MHz 17 24 - dB
s
21
phase response f = 50 MHz 45 - +45 deg
CTB composite triple beat 60 channels flat; V
o
= 46 dBmV; measured at
445.25 MHz
--67 dB
X
mod
cross modulation 60 channels flat; V
o
= 46 dBmV; measured at
55.25 MHz
--64 dB
CSO composite second order
distortion
60 channels flat; V
o
= 46 dBmV; measured at
446.5 MHz
--63 dB
d
2
second order distortion
[1]
--73 dB
V
o
output voltage d
im
= 60 dB
[2]
66 - - dBmV
F noise figure see Table 5
---dB
I
tot
total current consumption (DC)
[3]
-425435mA
BGD704 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 28 September 2010 6 of 10
NXP Semiconductors
BGD704
750 MHz, 20 dB gain power doubler amplifier
6. Package outline
Fig 1. Package outline SOT115J
UNIT
A
2
max.
c
ee
1
q
Q
max.
q
1
q
2
U
2
U
1
W
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm 20.8 9.5
0.51
0.38
0.25 27.2
2.04
2.54
13.75 2.54 5.08 12.7 8.8
4.15
3.85
2.4 38.1 25.4 10.2 4.2
44.75
44.25
8.2
7.8
0.25 0.1 3.8
bF
p
6-32
UNC
yw
0.7
x
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0 5 10 mm
scale
A
max.
D
max.
L
min.
E
max.
Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115
J
D
U
1
q
q
2
q
1
b
F
S
A
Z p
E
A
2
L
c
d
Q
U
2
M
w
78923
W
e
e
1
5
p
1
d
x M
B
y
M
B
B
04-02-04
10-06-18
y M
B

BGD704,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier BULK CATV
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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