74LVC86AS14-13 Datasheet 74LVC86AS14-13 | P4-P6

74LVC86A

Document number: DS35264 Rev. 3 - 2

4 of 10

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June 2012

74LVC86

A

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Symbol Parameter Test Conditions

V

CC

T

A

= -40°C to +85°C T

A

= -40°C to +125°C

Unit

Min Max Min Max

V

IH

High-level Input

Voltage

1.65V to 1.95V

0.65 X V

CC

0.65 X V

CC

V

2.3V to 2.7V 1.7 1.6

2.7V to 3.6V 2.0 2.0

4.5V to 5.5V

0.7 X V

CC

2.0

V

IL

Low-level input

voltage

1.65V to 1.95V

0.35 X V

CC

0.35 X V

CC

V

2.3V to 2.7V 0.7 0.7

2.7V to 3.6V 0.8

0.8

4.5V to 5.5 V

0.3 X V

CC

0.3 X V

CC

V

OH

High Level

Output Voltage

I

OH

= -100μA

1.65V to 3.6V

V

CC

– 0.2

V

CC

– 0.3

V

I

OH

= -4mA

1.65V 1.2

I

OH

= -8mA

2.3V 1.9

I

OH

= -12mA

2.7V 2.2 2.05

3.0V 2.3

2.1

I

OH

= -24mA

3.0V 2.2 2.0

V

OL

High-level

Output Voltage

I

OH

= 100μA

1.65V to 5.5V 0.2 0.3

V

I

OH

= 4mA

1.65V 0.45 0.6

I

OH

= 8mA

2.3V 0.70 0.85

I

OH

= 12mA

2.7V 0.40 0.6

3.0V 0.55 0.6

I

OH

=-24mA

3.0V 0.55 0.6

I

Input Current

V

I

=GND to 5.5V

3.6V ±5 ±20 μA

I

OFF

Power Down

Leakage

Current

V

I

or V

O

=

0V to 3.6V

0

10 20 μA

I

CC

Supply Current

V

I

= GND or V

CC

I

O

=0

3.6V 10

40 μA

ΔI

CC

Additional

Supply Current

One input at V

CC

–0.6V Other

2.7V to 3.6V 500

5000 μA

74LVC86A

Document number: DS35264 Rev. 3 - 2

5 of 10

www.diodes.com

June 2012

74LVC86

A

Switching Characteristics

Symbol Parameter

Test

Conditions

V

CC

T

A

= +25°C

-40°C to +85°C -40°C to +125°C

Unit

Min Typ Max Min Max Min Max

t

PD

Propagation

Delay A

N

or B

N

to Y

N

Figure 1

1.65V to1.95V 1.0 4.1 9.4 1.0 9.9 1.0 11.4

ns

2.3V to 2.7V 1.0 2.9 7.1 1.0 7.6 1.0 9.7

2.7V 1.0 2.8 5.4 1.0 5.6 1.0 7.1

3.0V to 3.6V 1.0 2.5 4.4 1.0 4.6 1.0 5.8

t

SK(0)

Output Skew

Time

3.0V to 3.6V 1.0 1.5 ns

Operating Characteristics (@T

A

= +25°C, unless otherwise specified.)

Parameter

Test

Conditions

V

CC

= 1.8V V

CC

= 2.5V V

CC

= 3.3V

Unit

Typ Typ Typ

C

pd

Power dissipation

capacitance per gate

f = 10 MHz 6.4 7.4 8.4 pF

C

I

Input Capacitance

V

i

= V

CC

– or

GND

4 4 4 pF

Package Characteristics

Symbol Parameter Test Conditions

V

CC

Min Typ Max Unit

θ

JA

Thermal Resistance

Junction-to-Ambient

SO-14

(Note 6)

TBD

o

C/W

TSSOP-14 159

θ

JC

Thermal Resistance

Junction-to-Case

SO-14

(Note 6)

TBD

o

C/W

TSSOP-14 25

Note: 6. Test condition for SO-14 and TSSOP-14: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

74LVC86A

Document number: DS35264 Rev. 3 - 2

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June 2012

74LVC86

A

Parameter Measuement Information

V

CC

Inputs

V

M

C

L

R

L

V

I

t

r

/t

f

1.8V±0.15V

V

CC

≤2ns

V

CC

/2

30pF 1KΩ

2.5V±0.2V

V

CC

≤2ns

V

CC

/2

30pF 500Ω

2.7V 2.7V ≤2.5ns 1.5V 50pF 500Ω

3.3V±0.3V 2.7V ≤2.5ns 1.5V 50pF 500Ω

V

oltage Waveform

Pulse Duration

V

oltage Waveform

Propagation Delay Times

Inverting and Non Inverting Outputs

Notes: A . Includes test lead and test apparatus capacitance.

B. All pulses are supplied at pulse repetition rate ≤ 10 MHz

C. Inputs are measured separately one transition per measurement

D. t

PLH

and t

PHL

are the same as t

PD

Figure 1. Load Circuit and Voltage Waveforms

74LVC86AS14-13

74LVC86AS14-13

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