KSC5367FTU

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSC5367F

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%

Thermal Characteristics

T

C

=25°C unless otherwise noted

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 1600 V

V

CEO

Collector-Emitter Voltage 800 V

V

EBO

Emitter-Base Voltage 12 V

I

C

Collector Current (DC) 3 A

I

CP

*Collector Curren (Pulse) 6 A

I

B

Base Current (DC) 2 A

I

BP

*Base Current (Pulse) 4 A

P

C

Power Dissipation(T

C

=25°C) 40 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 65 ~ 150 °C

Symbol Characteristics Rating Unit

R

θjc

Thermal Resistance Junction to Case 3.1 °C/W

R

θja

Junction to Ambient 62.5

KSC5367F

High Voltage and High Reliability

• High speed Switching

• Wide Safe Operating Area

• High Collector-Base Voltage

1

1.Base 2.Collector 3.Emitter

TO-220F

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSC5367F

Electrical Characteristics T

C

=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= 0.5mA, I

E

= 0 1600 - - V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 5mA, I

B

= 0 800 - - V

BV

EBO

Emitter-Base Breakdown Voltage I

C

=0.5mA, I

C

= 0 12 - - V

I

CBO

Collector Cut-off Current V

CB

= 1,600V, I

E

= 0 - - 20 µA

I

EBO

Emitter Cut-off Current V

EB

= 12V, I

C

= 0 - - 20 µA

h

FE1

h

FE2

DC Current Gain V

CE

= 3V, I

C

= 0.4A

V

CE

= 10V, I

C

= 5mA

12

8

-

-

35

-

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 250mA, I

B

= 25mA

I

C

= 500mA, I

B

= 50mA

I

C

= 1A, I

B

= 0.2A

-

-

-

-

-

-

2.5

4.0

2.5

V

V

V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= 500mA, I

B

= 50mA - - 1.5 V

C

ob

Output Capacitance V

CB

=10V, I

E

= 0, f = 1MHz - 40 - pF

t

ON

Turn ON Time V

CC

= 125V, I

C

= 0.5A

I

B1

= 42mA, I

B2

= -333mA

R

L

= 250Ω

--0.5µs

t

STG

Storage Time - 2.2 µs

t

F

Falling Time - - 0.5 µs

t

ON

Turn ON Time V

CC

= 250V, I

C

= 1A

I

B1

= 0.2A, I

B2

= -0.4A

R

L

= 250Ω

--0.5µs

t

STG

Storage Time - - 4.0 µs

t

F

Falling Time - - 0.5 µs

©2001 Fairchild Semiconductor Corporation

KSC5367F

Rev. A1, June 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Switching Time

Figure 5. Switching Time Figure 6. Safe Operating Area

0246810

0

1

2

3

4

5

I

B

= 0.2A

I

B

= 1.2A

I

B

= 1.4A

I

B

= 1A

I

B

= 0.6A

I

B

= 0.8A

I

B

= 0.4A

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.01 0.1 1 10

0.1

1

10

100

V

CE

= 5V

V

CE

= 3V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

I

C

= 10I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

V

CC

=250V I

C

=5I

B1

=-2.5I

B1

t

F

t

ON

t

STG

t

on

[µs], t

STG

[µs], t

F

[µs], TIME

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

V

CC

=125V

I

C

=0.5A

1I

B1

=42mA

t

F

t

ON

t

STG

t

on

[

µ

s], t

STG

[

µ

s], t

F

[

µ

s], TIME

I

C

[A], COLLECTOR CURRENT

1 10 100 1000

1E-3

0.01

0.1

1

10

5ms

100µs

1ms

PULSE

DC

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR EMITTER VOLTAGE

KSC5367FTU

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT NPN Si Transistor Tripple Diff Planar

Lifecycle:

New from this manufacturer.

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KSC5367FTU