PN4117A

©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
PN4117A
Absolute Maximum Ratings *
T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width 300µs, Duty Cycle 1.0%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 40 V
V
GS
Gate-Source Voltage -40 V
I
GF
Forward Gate Current 50 mA
T
STG
Operating and storage Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage V
DS
= 0, I
G
= -1µA-40 V
V
GS
(off) Gate-Source Cutoff Voltage V
DS
= -10V, I
D
= 1.0nA -0.6 -1.8 V
I
GSS
Gate Reverse Current V
DS
= 0V, V
GS
= -20V -1.0 pA
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= 10V, V
GS
= 0 30 90 µA
Small Signal Characteristics
gfs Common Source Forward Transconductance V
DS
= 10V, V
GS
= 0
f = 1.0KHz
70 210 mmhos
g
OSS
Common Source Output Conductance V
DS
= 10V, V
GS
= 0
f = 1KHz
3.0 mmhos
R
E
(
YFS
)
Common Source Forward Conductance V
DS
= 10V, V
GS
= 0
f = 30MHz
60 mmhos
C
ISS
Input Capacitance V
DS
= 10V, V
GS
= 0
f = 1.0KHz
3.0 pF
C
rss
Reverse Transfer Capacitance V
DS
= 10V, V
GS
= 0
f = 1.0MHz
1.5 pF
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
PN4117A
N-Channel Switch
This device is designed for low current DC and audio application.
These devices provide excellent performance as input stages for sub-
picoamp instrumentation or any high impedance signal sources.
Sourced from process 53.
1. Drain 2. Source 3. Gate
TO-92
1
0.46
±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27
±0.20
]
1.27TYP
[1.27
±0.20
]
3.60
±0.20
14.47
±0.40
1.02
±0.10
(0.25)
4.58
±0.20
4.58
+0.25
–0.15
0.38
+0.10
–0.05
0.38
+0.10
–0.05
TO-92
Package Dimensions
PN4117A
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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PN4117A

Mfr. #:
Manufacturer:
InterFET
Description:
JFET JFET N-Channel -40V 50mA 300mW 2mW
Lifecycle:
New from this manufacturer.
Delivery:
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