SOT223 PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 - OCTOBER 1995
FEATURES
* 2A CONTINUOUS CURRENT
* FAST SWITCHING
* GUARANTEED HFE SPECIFIED UP TO 2A
COMPLEMENTARY TYPE FZT 605
PART MARKING DETAIL FZT705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-140 V
Collector-Emitter Voltage V
CEO
-120 V
Emitter-Base Voltage V
EBO
-10 V
Peak Pulse Current I
CM
-4 A
Continuous Collector Current I
C
-2 A
Power Dissipation P
TOT
2W
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
(BR)CBO
-140 V I
C
=-100mA
V
(BR)CEO
-120 V I
C
=-10mA*
V
(BR)EBO
-10 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-0.1
-10
µA
µA
V
CB
=-120V
V
CB
=-120V, T
amb
=100°C
I
CES
-10
µA
V
CES
=-80V
Emitter Cut-Off Current I
EBO
-0.1
µA
V
EB
=-8V
SaturationVoltages V
CE(sat)
-1.3
-2.5
V
V
I
C
=-1A, I
B
=-1mA
I
C
=-2A, I
B
=-2mA
V
BE(sat)
-1.8 V I
C
=-1A, I
B
=-10mA
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.7 V I
C
=-1A, V
CE
=-5V
Static Forward Current
Transfer
h
FE
3000
3000
3000
2000
30000
I
C
=-10mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V
I
C
=-1A, V
CE
=-5V
I
C
=-2A, V
CE
=-5V
Transitional
Frequency
f
T
160 MHz I
C
=-100mA, V
CE
=-10V
f=20MHz
Output Capacitance C
obo
15 pF V
EB
=-10V, f=1MHz
Switching Times T
on
0.6
µs
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=0.5mA
T
off
0.8
µs
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT705
C
C
E
B
3 - 230
